Method of epitaxial lateral overgrowth
OwnerKazutaka Terashima, Mu-Jen Lai +1inventors
InventorsKazutaka Terashima, Mu-Jen Lai, Chiung-Yu Chang
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Abstract
A method of epitaxial lateral overgrowth. First, a silicon substrate is provided. Next, a selective growth mask is formed on the substrate. The selective growth mask is patterned to form a plurality of opening windows between the adjacent patterned selective growth masks so as to expose the surface of the substrate thereon. Finally, a BP epitaxial layer is formed by vertically overgrowing the BP epitaxial layer on the surface of the substrate in the opening windows until the BP epitaxial layer is thicker than the patterned selective growth mask, and laterally overgrowing the BP epitaxial layer on the patterned selective growth mask.
Claims20
A method of epitaxial lateral overgrowth, comprising:
- providing a silicon substrate;
- forming a selective growth mask on the substrate;
- patterning the selective growth mask to form a plurality of opening windows between the adjacent patterned selective growth masks so as to expose the surface of the substrate thereon;
- and
- forming a BP epitaxial layer, comprising:
- vertically overgrowing the BP epitaxial layer on the surface of the substrate in the opening windows until the BP epitaxial layer is thicker than the patterned selective growth mask;
- and
- laterally overgrowing the BP epitaxial layer on the patterned selective growth mask.
A method of epitaxial lateral overgrowth, comprising:
- providing a silicon substrate;
- forming a BP buffer layer on the silicon substrate;
- forming a selective growth mask on the BP buffer layer;
- patterning the selective growth mask to form a plurality of opening windows between the adjacent patterned selective growth masks so as to expose the surface of the BP buffer layer thereon;
- and
- forming a cladding layer, comprising:
- vertically overgrowing the cladding layer on the surface of the BP buffer layer in the opening windows until the cladding layer is thicker than the patterned selective growth mask;
- and
- laterally overgrowing the cladding layer on the patterned selective growth mask.
A method of epitaxial lateral overgrowth, comprising:
- providing a silicon substrate;
- forming a BP buffer layer on the silicon substrate;
- forming a GaN cladding layer on the BP buffer layer;
- forming a selective growth mask on the GaN cladding layer;
- patterning the selective growth mask to form a plurality of opening windows between the adjacent patterned selective growth masks so as to expose the surface of the GaN cladding layer thereon;
- and
- forming an active layer, comprising:
- vertically overgrowing the cladding layer on the surface of the GaN cladding layer in the opening windows until the active layer is thicker than the patterned selective growth mask;
- and
- laterally overgrowing the active layer on the patterned selective growth mask.
Dependencies are inferred from the claim text.