Memory storage device with heating element
AssigneeInternational Business Machines Corporation
InventorsDavid W. Abraham, Philip L. Trouilloud
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Abstract
A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing the temperature of the changeable magnetic region of said storage cell. By heating the storage cell via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.
Claims20
A memory storage device comprising:
- a) a storage cell comprising a changeable magnetic region, said changeable magnetic region comprising a material having a magnetization state that is responsive to a change in temperature thereof;
- and
- b) a heating element proximate to said storage cell for selectively changing the temperature of said changeable magnetic region of said storage cell.
A memory storage device comprising:
- a) a storage cell comprising a changeable magnetic region, said changeable magnetic region comprising a material having a magnetization state that is responsive to a change in temperature thereof;
- and
- b) a heating element responsive to an external energy source and proximate to said storage cell for selectively changing the temperature of said changeable magnetic region of said storage cell.
A memory array comprising two or more memory storage devices, at least one of said memory storage devices comprising:
- a) a storage cell having a bit line and word line associated therewith, said storage cell comprising a changeable magnetic region, said changeable magnetic region comprising a material having a magnetization state that is responsive to a change in temperature thereof;
- and
- b) a heating element proximate to said storage cell for selectively changing the temperature of said changeable magnetic region of said storage cell.
An integrated circuit comprising at least one memory storage device, said memory storage device comprising:
- a) a storage cell comprising a changeable magnetic region, said changeable magnetic region comprising a material having a magnetization state that is responsive to a change in temperature thereof;
- and
- b) a heating element proximate to said storage cell for selectively changing the temperature of said changeable magnetic region of said storage cell.
Dependencies are inferred from the claim text.