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US 2003/0198109 A1Published application
Semiconductor memory device with series-connected antifuse-components
AssigneeNEC Electronics Corporation
InventorTakashi Sakoh
Life of this patent
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Abstract
A semiconductor memory device comprises memory cells in rows and columns. Each memory is of the capacitor type and includes one portion of a dielectric layer. Antifuse-components are connected in series one after another between a power source electrode and an output terminal that is grounded when a MOS transistor is conductive.
Claims12
A semiconductor memory device comprising:
- a memory cell including one portion of a dielectric layer;
- and
- a plurality of antifuse-components including another portion of the dielectric layer, the plurality of antifuse-components being connected in series one after another.
Dependencies are inferred from the claim text.