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US 2003/0198102 A1Published application
Non-volatile semiconductor memory device
AssigneeSeiko Epson Corporation
InventorsTeruhiko Kamei, Masahiro Kanai
Life of this patent
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Abstract
A non-volatile semiconductor memory device enabling reading at high speed has a memory cell array including a plurality of memory cells arranged in a column direction and a row direction, each of the memory cells having first and second non-volatile memory elements that are controlled by one word gate and first and second control gates. One of the first and second non-volatile memory elements stores data, but the other does not function as an element which stores data.
Claims11
A non-volatile semiconductor memory device comprising:
- a memory cell array including a plurality of memory cells arranged in a column direction and a row direction, each of the memory cells having first and second non-volatile memory elements that are controlled by one word gate and first and second control gates, wherein:
- one of the first and second non-volatile memory elements stores data;
- and
- the other of the first and second non-volatile memory elements does not function as an element which stores data.
1 more element
Dependencies are inferred from the claim text.