Semiconductor memory device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorTatsuya Kunikiyo
Life of this patent
Estimating the term…
Abstract
A filter (FT1) is a low-pass filter in which a magnetic tunnel resistance element (MR) and a capacitor (C) are connected to each other in the shape of L. Further, in the filter (FT1), terminals (T1, T2) serve as input terminals and terminals (T3, T4) serve as output terminals. A current to change the magnetization direction of the magnetic tunnel resistance element (MR) is supplied through a current source (IP). With such a constitution, it is possible to provide an analog circuit, including a filter, a amplifier or the like, which can correct variations in value of elements caused by process variations in the manufacturing process.
Claims9
A semiconductor memory device at least comprising:
- an analog circuit having a variable resistance unit which consists of a plurality of magnetic tunnel resistance elements and obtains a plurality of kinds of resistance values by using said plurality of magnetic tunnel resistance elements singly or in combination and changing said resistance values of said plurality of magnetic tunnel resistance elements by single ones or combinations, being capable of changing said resistance values of said plurality of magnetic tunnel resistance elements by single ones or combinations with a plurality of control signals;
- a control unit for outputting said plurality of control signals;
- and
- a memory cell array,
- said semiconductor memory device adopting address signal multiplexing in which an address terminal is properly used in a time-division manner,
- wherein said control unit uses an address decoder of said memory cell array also as a decoder for resistance-value control of at least one of said plurality of magnetic tunnel resistance elements, and
- said address decoder is controlled on the basis of a magnetic tunnel resistance element control signal which is given to said address terminal in a time-division manner, for said resistance-value control of said at least one magnetic tunnel resistance element.
Dependencies are inferred from the claim text.