Back to results
US 2003/0197988 A1Published application
Magnetic sensing element
AssigneeAlps Electric Co., Ltd.
InventorsNaoya Hasegawa, Eiji Umetsu
Life of this patent
Estimating the term…
Loading patent…
Loading patent…
AssigneeAlps Electric Co., Ltd.
InventorsNaoya Hasegawa, Eiji Umetsu
Estimating the term…
A magnetic sensing element comprising a composite film having a center portion and two side portions, a second antiferromagnetic layer, a chromium nonmagnetic layer, and third antiferromagnetic layers is provided. The composite film comprises a first antiferromagnetic layer; a pinned magnetic layer on the first antiferromagnetic layer; a nonmagnetic material layer on the pinned magnetic layer; and a free magnetic layer on the nonmagnetic material layer. The second antiferromagnetic layer is disposed on the free magnetic layer. The chromium nonmagnetic layer is disposed on the second antiferromagnetic layer at the center portion. The third antiferromagnetic layers are disposed on the second antiferromagnetic layer at the two side portions. The magnetization direction in the two side portions of the free magnetic layer is pinned in the track width direction and the magnetization direction in the center portion is rotatable in response to external magnetic fields.
A magnetic sensing element comprising:
A magnetic sensing element comprising:
Dependencies are inferred from the claim text.
Drawings are temporarily unavailable. Open the PDF at USPTO
From the US filing history. Foreign family members aren’t listed.
Backward citations are indexed for grants only.
Magnetoresistive devices: using multilayer structures, e.g. giant magnetoresistance sensors
Nanotechnology for information processing, storage or transmission
Nanomagnetism
Using magneto-resistive devices or effects: using magnetic thin film layers or their effects, the films being part of integrated structures
Term end not estimated
1. Field of the Invention
The present invention relates generally to magnetic sensing elements for use in hard disk devices and magnetic sensors. In particular, it relates to a magnetic sensing element having excellent read characteristics that can adequately control the magnetization of free magnetic layers even with narrower tracks and to a method for fabricating the same.
2. Description of the Related Art
FIG. 1 is a partial cross-sectional view of a magnetic sensing element according to a first embodiment of the present invention viewed from the face opposing a recording medium; and
FIG. 2 is a partial cross-sectional view of a magnetic sensing element according to a second embodiment of the present invention viewed from the face opposing a recording medium;
FIG. 3 is a partial cross-sectional view of a magnetic sensing element according to a third embodiment of the present invention viewed from the face opposing a recording medium;
First Embodiment
FIG. 1 is a partial cross-sectional view of a magnetic sensing element (spin-valve thin film element) according to a first embodiment of the present invention viewed from the face of the magnetic sensing element opposing a recording medium. Hereinafter, this face is referred to as the “opposing face”.
Referring to FIG. 1, a seed layer 21 composed of a NiFe alloy, a NiFeCr alloy, elemental Cr, or the like is formed on a substrate 20. For example, the seed layer 21 is composed of (Ni0.8Fe0.2)60 at %Cr40 at % and has a thickness of 60 Å.