Method and apparatus for improved pinning strength for self-pinned giant magnetoresistive heads
AssigneeInternational Business Machines Corporation
InventorHardayal Singh Gill
Life of this patent
Estimating the term…
Abstract
A Giant Magneto-Resistive (GMR) sensor (800) provides increased GMR effect through the use of composite laminate structure (870) as the second of two self-pinned layers of Anti-Parallel (AP) self-pinned layer 865. A positive magnetostrictive material forms the embedded layer (820) of AP pinned layer (865) to increase the perpendicular to Air Bearing Surface (ABS) intrinsic anisotropy field (Hk). The embedded layer (820) of AP pinned layer (865) has no effect on the GMR stack texture, since outer ferromagnetic layers (815 and 825) are provided to control the GMR stack texture.
Claims21
A method of forming a spin valve sensor, comprising:
- forming a first pinned layer having a first magnetic orientation on a substrate, the method of forming the first pinned layer includes embedding an inner ferromagnetic layer between first and second ferromagnetic layers, wherein the inner layer provides a greater positive magnetostrictive coefficient in relation to the first and second ferromagnetic layers;
- and
- depositing a second pinned layer having a second magnetic orientation above the first pinned layer, wherein the first and second magnetic orientations are self-biased anti-parallel in relation to one another.
A spin valve sensor comprising:
- a first pinned layer having a first magnetic orientation, the first pinned layer comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer disposed above the first ferromagnetic layer;
- and
- an inner ferromagnetic layer embedded between the first and second ferromagnetic layers, the inner ferromagnetic layer having a greater positive magnetostrictive coefficient in relation to the first and second ferromagnetic layers;
- and
- a second pinned layer having a second magnetic orientation, wherein the first and second magnetic orientations are self-biased anti-parallel in relation to one another.
A magnetic storage system, comprising:
- a magnetic recording medium;
- a spin valve sensor disposed proximate to the recording medium, the spin valve sensor, comprising
- a first pinned layer having a first magnetic orientation, the first pinned layer comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer disposed above the first ferromagnetic layer;
- and
- an inner ferromagnetic layer embedded between the first and second ferromagnetic layers, the inner ferromagnetic layer having a greater positive magnetostrictive coefficient in relation to the first and second ferromagnetic layers;
- and
- a second pinned layer having a second magnetic orientation, wherein the first and second magnetic orientations are self-biased anti-parallel in relation to one another.
Dependencies are inferred from the claim text.