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US 2003/0197981 A1Published application
Spin valve type transducer capable of reducing reproducing gap
AssigneeTDK Corporation
InventorNobuyuki Ishiwata
Life of this patent
Estimating the term…
Abstract
In a spin value type transducer including two magnetic shield layers, a patterned magnetoresistance element is in direct contact with one of the magnetic shield layers. A permanent magnet layer and an electrode layer are formed on the sides of the patterned magnetoresistance element.
Claims54
A spin value type transducer comprising:
- two magnetic shield layers;
- a patterned magnetoresistance element in direct contact with one of said two shield layers;
- a permanent magnet layer formed on sides of said patterned magnetoresistance element;
- and an
- an electrode layer formed on the sides of said patterned magnetoresistance element.
2 more elements
A spin value type transducer comprising:
- first and second magnetic shield layers;
- a patterned magnetoresistance element in direct contact with said first shield layer;
- a magnetic isolation layer formed on sides of said patterned magnetoresistance element in direct contact with said first magnetic shield layer;
- a permanent magnet layer formed on said magnetic isolation layer;
- and
- an electrode layer formed on said permanent magnet layer.
3 more elements
A spin value type transducer comprising:
- first and second magnetic shield layers;
- a magnetoresistance element including a patterned portion and a non-patterned portion in direct contact with said first shield layer;
- a permanent magnet layer formed on said non-patterned portion of said magnetoresistance element;
- and
- an electrode layer formed on said permanent magnet layer.
2 more elements
A spin value type transducer comprising:
- first and second magnetic shield layers;
- a gap layer formed on said first magnetic shield layer;
- a patterned magnetoresistance element in direct contact with said gap layer;
- a permanent magnet layer formed on sides of said patterned magnetoresistance element;
- and
- an electrode layer formed on said permanent magnet layer,
- said second magnetic shield layer is in direct contact with said magnetoresistance element and said electrode layer.
4 more elements
A magnetic storage apparatus including a magnetic write head, a magnetic read head and a magnetic medium, said magnetic read head comprising:
- two magnetic shield layers;
- a patterned magnetoresistance element in direct contact with one of said two shield layers;
- a permanent magnet layer formed on sides of said patterned magnetoresistance element;
- and
- an electrode layer formed on the sides of said patterned magnetoresistance element.
2 more elements
Dependencies are inferred from the claim text.