Method of detecting the thickness of thin film disks or wafers
AssigneeKLA-Tencor Technologies Corporation
InventorsAlireza Shahdoost Moghaddam, Hung Phi Nguyen
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AssigneeKLA-Tencor Technologies Corporation
InventorsAlireza Shahdoost Moghaddam, Hung Phi Nguyen
Estimating the term…
The thickness of a wafer, substrate, or magnetic disk is measured by a shadow technique. A light source is positioned to pass a portion of light beam intensity on both sides of the wafer, substrate, or magnetic disk. A detector measures the light beam intensity after the light beam passes the wafer, substrate, or magnetic disk.
A system for determining the thickness of a substantially planar object comprising:
A method for determining the thickness of a substantially planar object, comprising:
A method for performing a measurement on a substantially planar object, comprising:
Dependencies are inferred from the claim text.
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Of coating: with measurement of polarization
Measuring length, thickness or similar linear dimensions
Term end not estimated
1. Field of the Invention
The present invention is directed toward measuring thin films and defects on silicon wafers, magnetic thin film disks and transparent and coated glass substrates and more particularly toward measuring thin film thickness, and wear, surface roughness, scratches, particles, stains, pits, mounds, surface topography, step heights, and inclusions using a laser directed toward a thin film disk at many angles including non-Brewster's angles of an absorbing layer of the thin film.
2. Description of Background Art
FIG. 1 is an illustration of a thin film that can be measured using an embodiment of the present invention.
FIG. 2 is an illustration of a semiconductor wafer that can be measured with one embodiment of the present invention.
FIG. 3 is one half of optical layout of combined ellipsometer and optical profiler (side view).
A preferred embodiment of the present invention is now described with reference to the figures where like reference numbers indicate identical or functionally similar elements. Also in the figures, the left most digit(s) of each reference number correspond(s) to the figure in which the reference number is first used.
FIG. 3 is an illustration of an apparatus for measuring properties of the thin film according to an embodiment of the present invention. The apparatus uses a focused laser light signal whose angle of propagation θ (as shown in FIG. 3) can be between zero degrees from normal and ninety degrees from normal.
One embodiment of the apparatus 300 includes a conventional laser diode 301, e.g., RLD65MZT1 or RLD-78MD available from Rolm Corporation, Kyoto, Japan, which has been collimated by Hoetron Corp., Sunnyvale, Calif., e.g., a conventional linear polarizer 302, e.g., made of Polarcor that is commercially available from Newport Corp., Irvine, Calif., a conventional zero order half wave plate 303 that is commercially available from CVI Laser, Livermore Calif., a conventional focusing lens 304 that is commercially available from Newport Corporation, Irvine, Calif., conventional mirrors 305 and 306 available from Newport Corp. Irving, Calif. A collimating lens 309 available from Newport Corp., a zero order quarter wave plate 310 available from CVI Laser Corp., a conventional polarizing beam splitter 312 rotated at 45° to the plane of incidence available from CVI Laser Corp., a pair of conventional quadrant detectors 311 and 313 available from Hamamatsu Corp., Hamamatsu City, Japan, a conventional avalanche photodiode 314 available from Advanced Photonix, Inc., Camarillo, Calif. and a conventional motor 315 available from Maxon Precision Motors, Burlingame, Calif. for rotating the half wave plate 303. The avalanche photodiode 314 may be replaced with a conventional photo multiplier tube (PMT) available from Hamamatsu Corp., Hamamatsu City, Japan.