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US 2003/0197859 A1Published application
Method of judging residual film by optical measurement
AssigneeKabushiki Kaisha Toshiba
InventorsTakeo Kubota, Atsushi Shigeta
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AssigneeKabushiki Kaisha Toshiba
InventorsTakeo Kubota, Atsushi Shigeta
Estimating the term…
A method of judging a residual film on a sample by an optical measurement, the sample including a first metal film whose reflectance is changed depending on a wavelength of measuring light, and an insulating film formed above the first metal film, and the residual film being a second metal film above the insulating film, the method comprising irradiating the sample with a measuring light so as to measure a change in intensity of light reflected from the sample depending on the wavelength of the measuring light, thereby obtaining a reflectance spectrum curve, and dividing the reflectance spectrum curve into a plurality of wavelength regions so as to judge presence or absence of the second metal film above the insulating film depending on a waveform in each of the wavelength regions of the reflectance spectrum curve.
A method of judging a residual film on a sample by an optical measurement, said sample including a first metal film whose reflectance is changed depending on a wavelength of measuring light, and an insulating film formed above the first metal film, and said residual film being a second metal film above the insulating film, the method comprising:
A method of judging a residual film by an optical measurement for judging presence or absence of a barrier film and a metal film above an insulating film of a semiconductor substrate provided with a Cu wiring and the insulating film formed above the Cu wiring, comprising:
A method of manufacturing a semiconductor device, comprising:
Dependencies are inferred from the claim text.
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Systems specially adapted for particular applications: investigating thin films, e.g. matrix isolation method
Systems in which incident light is modified in accordance with the properties of the material investigated: specular reflectivity
Contactless testing: using non-ionising electromagnetic radiation, e.g. optical radiation
Characterised by the properties tested or measured, e.g. structural or electrical properties: structural properties, e.g. testing or measuring…
Term end not estimated
This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2002-089775, filed Mar. 27, 2002, the entire contents of which are incorporated herein by reference.
1. Field of the Invention
The present invention relates to a method of judging a residual film by an optical measurement, particularly, to a method of judging a residual film by means of a spectral reflection interferometer in the inspecting step involved in the manufacturing process of a semiconductor device.
FIGS. 1A to 1C are cross-sectional views collectively showing the process of forming a Cu damascene wiring in Example 1 of the present invention;
FIG. 2 is a cross-sectional view for explaining the judgment of the residue of the metal film in forming the Cu damascene wiring in Example 1 of the present invention;
FIGS. 3A to 3C are graphs each showing the reflectance spectrum that is changed with progress of the CMP treatment in Example 1 of the present invention;
Some embodiments of the present invention will now be described.
As a result of extensive research conducted on the method of judging by an optical measurement the residual film in the polishing step, the present inventors paid attention to the situation that, since the polishing is insufficient in the case where the polishing residual film is present in the field portion, judgment on only the presence or absence of the polishing residual film is required for the judgment on the necessity of, for example, additional polishing, and the thickness of the polishing residual film in the field portion is not necessarily required information.
The method of judging the residual film by an optical measurement according to a first embodiment of the present invention, which is based on the particular situation described above, comprises measuring the change in the intensity of light reflected from a sample depending on the wavelength of the measuring light so as to obtain a reflectance spectrum curve, and dividing the reflectance spectrum curve into a plurality of wavelength regions so as to judge presence or absence of a second metal film on an insulating film formed on a first metal film depending on the waveform of the reflectance spectrum curve in each of the wavelength regions.