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AssigneeSeiko Epson Corporation
InventorEiichi Sato
Estimating the term…
A manufacturing method of semiconductor devices, micromachines such as semiconductor device, narrow pitch connectors, electrostatic actuators or piezoelectric actuators, and ink jet heads, ink jet printers, liquid crystal panels, and electronic appliances, including them characterized in that short circuit due to dusts floating in the air will not take place. In a method where a silicon wafer (30) undergoes dicing to manufacture semiconductor devices (20), a groove (30a) covered by an insulating layer and spanning a dicing line is formed in the above described silicon wafer, and the silicon wafer undergoes dicing along the dicing line.
A narrow pitch connector comprising a substrate on which first terminal electrodes, second terminal electrodes and wiring electrically connecting said first terminal electrodes with said second terminal electrodes are formed, said wiring having a function of making conversion from the pitch of said first terminal electrodes and between said second terminal electrodes,
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Backward citations are indexed for grants only.
For flexible printed circuits, flat or ribbon cables or like structures: connecting to rigid printed circuits or like structures
Arrangements for protection of devices
Arrangements for protection of devices: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
Characterised by their shapes or dispositions: shielding bumps
Term end not estimated
The present invention relates to a manufacturing method of a semiconductor device, a semiconductor device, a connector for a narrow pitch, an electrostatic actuator including this connector for a narrow pitch, a piezoelectric actuator, a micromachine, a liquid crystal panel, and an ink jet head using these electrostatic actuator and piezoelectric actuator, an ink jet printer on which these ink jet heads are mounted, and electronic appliances.
Conventionally, known is a method in which an insulating layer is formed on the surface of single crystal silicon wafer (hereinafter to be referred to as silicon wafer) and the upper surface of this insulating layer undergoes the CVD method (or spattering) and etching so that wirings, etc. are formed, and thus a semiconductor device is manufactured.
FIG. 23 is a plan view of a silicon wafer in which a semiconductor device has been formed, and FIG. 24 is a sectional view along a line A-A in FIG. 23 showing the main portion thereof which has been enlarged.
FIG. 1 is a front view showing a connector for a narrow pitch related to a Embodiment 1 of the present invention and a terminal portion of an object for connection with which this connector is connected;
FIGS. 2(A) and 2(B) are enlarged sectional views of a circumference portion in the connector for a narrow pitch related to a Embodiment 1 of the present invention;
FIG. 3 is a plan view of a silicon wafer in which a number of connectors for a narrow pitch related to the Embodiment 1 of the present invention are formed;
Embodiment 1
FIG. 1 is a plan view on a connector for a narrow pitch related to a Embodiment 1 of the present invention. A connector for a narrow pitch 20 comprises, as shown in FIG. 1, a substrate 21 made of single crystal silicon on which an input wiring 25 and an output wiring 27 are formed via an insulating layer, and moreover a driver IC 23 is implemented. Ends of the input wiring 25 and the output wiring 27 will be terminal electrodes 25a and 27a respectively. In addition, the input side as well as the output side is arranged to undergo conversion on the number of wiring as well as the wiring pitch.
Incidentally, the number of terminal electrodes 25a and 27a are different depending on object for connection 50 to be brought into connection with the output side. In case of an object for connection 50 being an electrostatic actuator to be mounted on a printer head, it depends on the number of units, but the input side happens to reach not less than several tens of pieces and the output side does as many as several hundreds of pieces.