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US 2003/0197587 A1Published application
Solid-state inductor and method for same
AssigneeSharp Laboratories of America, Inc.
InventorsWei Pan, Sheng Teng Hsu, Wei-Wei Zhuang
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AssigneeSharp Laboratories of America, Inc.
InventorsWei Pan, Sheng Teng Hsu, Wei-Wei Zhuang
Estimating the term…
A solid-state inductor and a method for forming a solid-state inductor are provided. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) thin film overlying the bottom electrode; forming a top electrode overlying the CMR thin film; applying an electrical field treatment to the CMR thin film in the range of 0.4 to 1 megavolts per centimeter (MV/cm) with a pulse width in the range of 100 nanoseconds (ns) to 1 millisecond (ms); in response to the electrical field treatment, converting the CMR thin film into a CMR thin film inductor; applying a bias voltage between the top and bottom electrodes; and, in response to the applied bias voltage, creating an inductance between the top and bottom electrodes. When the applied bias voltage is varied, the inductance varies in response.
A method for forming a solid-state inductor, the method comprising:
A method for forming a solid-state inductor, the method comprising:
A solid-state inductor, the inductor comprising:
Dependencies are inferred from the claim text.
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Using resistive RAM [RRAM] elements: comprising metal oxide memory material, e.g. perovskites
Resistors, capacitors or inductors: inductors
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting
Resistive cell, memory material aspects: material having complex metal oxide, e.g. perovskite structure
Term end not estimated
1. Field of the Invention
This invention generally relates to semiconductor fabrication and, more particularly, to a solid-state inductor for analog integrated circuit (IC) fabrication and a method for processing the same.
2. Description of the Related Art
FIG. 1 is a diagram of the present invention solid-state inductor.
FIG. 2 illustrates the present invention solid-state inductor in a couple of practical IC applications.
FIG. 3 illustrates the reactance of an exemplary CMR film, before electric field treatment.
FIG. 1 is a diagram of the present invention solid-state inductor. The inductor 100 comprises a bottom electrode 102 and an electric field-treated colossal magnetoresistance (CMR) thin film 104 overlying the bottom electrode 102. A top electrode 106 overlies the CMR thin film 104.
The CMR thin film 104 is made from a material such as Pr0.3Ca0.7MnO3 (PCMO), La0.7Ca0.3MnO3 (LCMO), Y1-xCaxMnO3 (YCMO), or high-temperature super conductor (HTSC) materials. However, other equivalent materials might also be practical, depending upon requirements. The CMR thin film 104 has a thickness 108 of approximately 2000 Å.
As explained in more detail below, the CMR thin film 104 has been previously exposed to an electric field in the range of 0.4 to 1 megavolts per centimeter (MV/cm), with a pulse width in the range of 100 nanoseconds (ns) to 1 millisecond (ms). This is just an exemplary treatment. Other means of treatment are practical and depend upon the CMR material, intervening materials, and the desired inductance.