Threshold voltage-independent MOS current reference
AssigneeDialog Semiconductor GmbH
InventorsFrank Kronmueller, Horst Knoedgen
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AssigneeDialog Semiconductor GmbH
InventorsFrank Kronmueller, Horst Knoedgen
Estimating the term…
A new current reference circuit is achieved. This current reference circuit is based on MOS transistors but does not depend upon the threshold voltage. The circuit comprises, first, a first MOS transistor having gate, drain, and source. A gate voltage value is coupled from the gate to the source. A second MOS transistor has gate, drain, and source. The second MOS transistor is of the same size and type as the first MOS transistor. The source is coupled to said first MOS transistor source. The gate voltage value plus a delta voltage value is coupled from the gate to the source. A means is provided for forcing a drain voltage value from the drain to the source of the first MOS transistor and from the drain to the source of the second MOS transistor. The first MOS transistor and the second MOS transistor conduct drain currents in the linear mode. Finally, a means is provided for subtracting the first MOS transistor drain current from the second MOS transistor drain current to thereby create a current reference value. The current reference value does not depend upon the threshold voltage of the first and second MOS transistors. The circuit may be further applied to create a nearly zero temperature coefficient current reference.
A current reference circuit comprising:
A current reference circuit comprising:
A nearly zero temperature coefficient current reference circuit comprising:
Dependencies are inferred from the claim text.
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Current mirrors: using field-effect transistors only
Systems for regulating electric or magnetic variables
Term end not estimated
(1) Field of the Invention
The invention relates to a current reference circuit, and more particularly, to a threshold voltage-independent MOS current reference circuit.
(2) Description of the Prior Art
In the accompanying drawings forming a material part of this description, there is shown:
FIG. 1 illustrates a first preferred embodiment of the present invention.
FIG. 2 illustrates a first preferred embodiment of the present invention, using NMOS transistors, including a means of forcing a drain voltage and a means of subtracting the drain currents to thereby create the current reference.
The preferred embodiments disclose the novel current reference circuit of the present invention. In the first embodiment, a matched pair of NMOS transistors is used to create the threshold voltage-independent current reference. In the second preferred embodiment, a matched pair of PMOS transistors is used in an inverted version of the present invention. Finally, the invention is applied to a near zero temperature coefficient (TC) current reference. It should be clear to those experienced in the art that the present invention can be applied and extended without deviating from the scope of the present invention.
Referring now to FIG. 1, a first preferred embodiment of the present invention is illustrated. Several important features of the invention are shown. The circuit comprises a matching pair of MOS transistors, N1 10 and N2 14. Each transistor, N1 10 and N2 14, is of the same type and size, and more preferably, is oriented in the same layout direction. Even though the novel technique of the invention eliminates Vth from the current reference final value, other parameters, such as mobility, or μo, and gate capacitance, Cox, should still be made to match as closely a possible between the two transistors. A significant advantage of the present invention is the elimination of the Vth dependence in the current reference. By comparison, μo and Cox process variance is found to be much less than that of Vth.
The first MOS transistor, N1 10, has a gate voltage value, V1 26, coupled from the gate to the source. The second MOS transistor, N2 14, has the source coupled to the first MOS transistor source at the VSS node 42. A second gate voltage value, V2 30, is coupled from the gate to the source of N2 14. The second gate voltage value, V2 30, comprises the first gate voltage value, V1 26, plus a delta voltage value, ΔV.