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AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKenji Toyoda, Michihito Ueda, Kiyoshi Morimoto, Kiyoyuki Morita, Toru Iwata, Jun Kajiwara
Estimating the term…
A potential generating circuit comprises a capacitor (4); a ferroelectric capacitor (6) connected in series to the capacitor (4); an output terminal (11); a capacitor (10) for grounding the output terminal (11); a switch (9) for connecting a connecting node (5) between the two capacitors (4, 6) to the output terminal (11); and a switch (1) for connecting the connecting node (5) to the ground; wherein during a first period, with the switches (1) and (9) placed in the OFF state, a terminal (3) is provided with a positive potential and a terminal (7) is grounded; wherein during a second period following the first period, the terminal (3) is grounded and the switch (9) is placed in the ON state; wherein during a third period following the second period, the switch (9) is placed in the OFF state, the switch (1) is placed in the ON state, and the terminal (7) is provided with a positive potential; wherein during a fourth period following the third period, the terminal (7) is grounded; and wherein the first through fourth periods are repeated.
A potential generating circuit comprising:
Dependencies are inferred from the claim text.
From the US filing history. Foreign family members aren’t listed.
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Using resistors or capacitors, e.g. potential divider: using capacitors charged and discharged alternately by semiconductor devices with control…
Using capacitors charged and discharged alternately by semiconductor devices with control electrode , e.g. charge pumps: charge pumps of the…
Apparatus for conversion between ac and ac, between ac and dc, or
Term end not estimated
(1) Field of the Invention
The present invention relates to a semiconductor device, and in particular to a potential generating circuit, a potential generating device, and a semiconductor device using the same, and a driving method thereof, all of which can provide an electric potential different from a supply voltage.
(2) Description Of Related Art
FIG. 1 is a circuit diagram for showing a potential generating circuit according to a first embodiment of the present invention.
FIG. 2 is an explanatory drawing for the operation of the potential generating circuit according to the first embodiment of the present invention.
FIG. 3 shows how the voltage applied to each terminal of the potential generating circuit according to the first embodiment of the present invention varies with time.
Embodiments of a potential generating circuit, potential generating devices, and semiconductor devices using the same, and driving methods thereof according to the present invention will be described below with reference to the accompanying drawings.
(First Embodiment)
FIG. 1 is a circuit diagram for showing a potential generating circuit according to a first embodiment of the present invention. The potential generating circuit according to this embodiment comprises a N-channel MOS transistor 1 as a second switch, a reset control terminal 2, a ferroelectric write terminal 3, a paraelectric capacitor 4 as a first capacitor, a ferroelectric capacitor 6 as a second capacitor, a ferroelectric reset terminal 7, an output control terminal 8, a N-channel MOS transistor 9 as a first switch, a load capacitor 10, and an output terminal 11. The paraelectric capacitor 4 and the ferroelectric capacitor 6 are connected in series with each other to form a connecting node 5. In order to prevent the pn junction formed between the source-drain region and the substrate in each MOS transistor from being forward-biased, the substrates of the N-channel MOS transistors 1 and 9 are connected to the output terminal 11 so that they may have a negative potential. In FIG. 1, a target that is supplied with voltage is expressed as a load resistor 12. The term “terminal” used herein is not limited to a connector, a contact pin, or any other electric circuit parts and also means any end, to which electric connection can be made, in each electric circuit element.