Photomask for test wafers
AssigneeHitachi, Ltd.
InventorsYuichi Hamamura, Takaaki Kumazawa, Hisao Asakura, Aritoshi Sugimoto, Kazuyuki Tsunokuni
Life of this patent
Estimating the term…
Loading patent…
AssigneeHitachi, Ltd.
InventorsYuichi Hamamura, Takaaki Kumazawa, Hisao Asakura, Aritoshi Sugimoto, Kazuyuki Tsunokuni
Estimating the term…
A manufacturing method of an electronic device is to improve test efficiency using test structure and improve yield. The manufacturing method performs test using a first lead wire disposed on an insulating layer formed on a substrate and a second lead wire electrically connected to the substrate and disposed on the insulating layer and manages the electronic device on the basis of results of the test to manufacture the electronic device. The manufacturing method includes a step of testing whether the first lead wire is disconnected or not by measuring an electric resistance between both ends of the first lead wire and a step of testing whether the first and second lead wires are short-circuited or not by measuring an electric resistance between the first lead wire and the substrate.
A method of manufacturing an electronic device, comprising:
A method of manufacturing an electronic device, comprising:
A wafer including an electronic device and lead wires for test of said electronic device, said electronic device and said lead wires being formed on a substrate, wherein said lead wires comprises a first lead wire for detection of open circuit and second lead wires for detection of short circuit formed on said substrate through an insulating layer, and said second lead wires are electrically connected to said substrate.
A wafer including an electronic device and lead wires for test of said electronic device, said electronic device and said lead wires being formed on a substrate, wherein said lead wires comprises a first lead wire for detection of open circuit and second lead wires for detection of short circuit formed on said substrate through an insulating layer, and said second lead wires are connected to said substrate by means of channels through contact plugs.
Dependencies are inferred from the claim text.
Drawings are temporarily unavailable. Open the PDF at USPTO
From the US filing history. Foreign family members aren’t listed.
Backward citations are indexed for grants only.
Specific types of tests or tests for a specific type of fault, e.g. thermal mapping, shorts testing: checking for open circuits or shorts, e.g.…
Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP]: using test structures on, or…
Measuring electric variables
Term end not estimated
The present invention relates to technique for testing and manufacturing electronic devices such as semiconductor devices, electric circuit boards and CCD devices.
Recently, in order to increase competitive power of products in a market, it is indispensable to shorten a development term of products. However, since it takes several tens of days from setting of products on a manufacturing line to complete test of electrical characteristics for judging whether products are good or not upon completion of the products, it is late even if a counter plan is considered after reception of the tested results of the electrical characteristics.
In order to solve the above problem, there is a method that in development of products a common process is divided into blocks and electrical test is made in each block, so that its tested result is fed back to the process to establish the process of the block early. A sample for monitoring the block is named a test structure, a short loop monitor or a test element group (TEG). Hereinafter, these are named test structures generically. An example of the test structure is disclosed in “Integrated Circuit Manufacturability, IEEE PRESS, pp. 26-29”.
FIGS. 1A and 1B show a test structure according to the present invention;
FIG. 2 illustrates a method of detecting short-circuit defect;
FIGS. 3A and 3B illustrate a method of locating short-circuit defect;
Embodiments of the present invention are now described with reference to the accompanying drawings.
FIGS. 1A and 1B show a test structure capable of detecting not only short-circuit defect but also open circuit defect. Although not shown, a plurality of test structures are disposed on the whole surface of a wafer or together with a chip constituting a final product and generally disposed together with a different test structure for performing another test such as test for defect in contact.
First, a open circuit detection lead wire 1 having a desired width and length is disposed meandering in a first wiring layer. Probing electrodes 3 and 3′ are connected to both ends of the lead wire 1 so that a wiring resistance is electrically measured to confirm the presence of open circuit.