Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element

A method for producing a magnetoresistance effect element, comprising:

• a first step for forming a free layer, a non-magnetic layer, and a metal magnetic film of a pinned layer successively directly on a substrate, or via a layer on the substrate:
• a second step for oxidizing a surface of the metal magnetic film of the pinned layer;
• a third step for forming an oxide magnetic film on a surface of the metal magnetic film;
• and
• a fourth step for forming a pinning layer on the oxide magnetic film,
• wherein a magnetization direction of the free layer is easily rotated in response to an external magnetic field, and a magnetization direction of the pinned layer is not easily rotated in response to an external magnetic field.

A method for producing a magnetoresistance effect element, comprising:

• a first step for forming a free layer, a non-magnetic layer, and a first metal magnetic film of a pinned layer successively directly on a substrate, or via a layer on the substrate;
• a second step for forming an oxide magnetic film of the pinned layer via reactive sputtering;
• a third step for forming a second metal magnetic film on a surface of the oxide magnetic film;
• and
• a fourth step for forming a pinning layer on the second magnetic film,
• wherein a magnetization direction of the free layer is easily rotated in response to an external magnetic field, and a magnetization direction of the pinned layer is not easily rotated in response to an external magnetic field.