High density substrate for the packaging of integrated circuits

A package for mounting an integrated circuit die, the package comprising:

• a metal substrate having first and second opposing primary surfaces and an aperture formed therebetween;
• and
• a flexible thin film interconnect structure formed over the first surface of the metal substrate and over the aperture, the flexible thin film interconnect structure comprising bottom and top opposing surfaces and a plurality of thin film conductive layers and a plurality of thin film dielectric layers having an elongation percentage of at least 30 percent formed between the bottom and top surfaces, the bottom surface including a first region in direct contact with the first surface of the metal substrate and a second region that overlies the aperture, the second region comprising a plurality of flip chip bonding pads exposed within the aperture, the top surface of the flexible thin film interconnect structure including a plurality of exposed ball grid array bonding pads;
• wherein the plurality of flip chip bonding pads have a pitch appropriate for attaching the integrated circuit die to package and the plurality of exposed ball grid array bonding pads have a pitch greater than the pitch of the plurality of flip chip bonding pads.

A semiconductor device comprising:

• a metal substrate having first and second opposing surfaces and an aperture formed therebetween;
• a flexible thin film interconnect structure formed over the first surface of the metal substrate and over the aperture, the flexible thin film interconnect structure comprising bottom and top opposing surfaces and a plurality of thin film conductive layers and a plurality of thin film dielectric layers having an elongation percentage of at least 30 percent formed between the bottom and top surfaces, the bottom surface including a first region in direct contact with the first surface of the metal substrate and a second region that overlies the aperture;
• a first plurality of bonding pads formed on the bottom surface of the thin film interconnect structure within the aperture of the metal substrate, the first plurality of bonding pads being spaced at an integrated circuit pitch;
• a second of bonding pads formed on the top surface of the thin film interconnect structure, the second plurality of bonding pads being spaced at a package pitch;
• a integrated circuit die integrated circuit die attached to the first plurality of bonding pads within the aperture;
• and
• a lid attached to the second surface of the metal substrate such that the lid encloses the integrated circuit die within the aperture.