Semiconductor device and a method of manufacturing the same
AssigneesHitachi, Ltd., Hitachi ULSI Systems Co., Ltd.
InventorsKenichi Yamamoto, Toshiaki Morita, Munehiro Yamada, Ryosuke Kimoto
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Abstract
The impact strength resistance of a solder joint portion of a semiconductor device is improved. The semiconductor device has a joint structure wherein a jointing layer which does not contain sulfur substantially is arranged between an underlying conductive layer and a lead-free solder layer and further between the jointing layer and the lead-free solder layer is formed an alloy layer comprising elements of these layers.
Claims11
A semiconductor device comprising a joint structure in which a jointing layer which does not contain sulfur substantially is arranged between an underlying conductive layer and a lead-free solder layer, and an alloy layer comprising elements of these layers is further formed between the jointing layer and the lead-free solder layer.
Dependencies are inferred from the claim text.