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US 2003/0197272 A1Published application
Semiconductor integrated circuit device
AssigneeSharp Kabushiki Kaisha
InventorTakehiro Suzuki
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AssigneeSharp Kabushiki Kaisha
InventorTakehiro Suzuki
Estimating the term…
By having narrow pitches between wires in a first wiring layer located in an interlayer insulating layer, a total amount of the first wiring layer in the interlayer insulating film is increased, thereby reducing a total amount of the interlayer insulating film having low hardness, which causes warping. As a result. for example, no stress (pressure application and the like) due to the warping of the interlayer insulating film will be applied on a protective film provided on the interlayer insulating film, thereby preventing occurrence of a crack and the like in the protective film. Therefore, it is possible to prevent failure such as electrical disconnection of the second wiring layer due to the crack and the like in the protective film, thereby attaining a semiconductor device with high reliability.
A semiconductor integrated circuit device comprising (i) a first wiring layer in which a plurality of wires electrically connected with an operation area are aligned, (ii) a second wiring layer formed on an interlayer insulating film with which the first wiring layer is coated, and (iii) protruded electrodes provided on the second wiring layer, the protruded electrodes being so formed as to at least partially overlap the operation area, and being for establishing external electrical connection, wherein:
A semiconductor integrated circuit device comprising (i) a first wiring layer in which a plurality of wires electrically connected with an operation area are aligned, (ii) a second wiring layer formed on an interlayer insulating film with which the first wiring layer is coated, and (iii) protruded electrodes provided on the second wiring layer, the protruded electrodes being so formed as to at least partially overlap the operation area, and being for establishing external electrical connection, the semiconductor integrated circuit device further comprising:
Dependencies are inferred from the claim text.