Semiconductor device with staggered hexagonal electrodes and increased wiring width

A semiconductor device with staggered arrangement in three lines with an inside-line electrode, a central-line electrode and an outside-line electrode on the peripheral part of the surface of a semiconductor pellet, wherein;

• the inside-line electrode configures an octagonal electrode having a hypotenuse on the central-line electrode side formed to cut vertically on the position at a distance of the sum of the minimum length (R) of the electrode necessary for wire-bonding and the minimum length (F) of the electrode protective film from the center of the electrode on the line connecting the center of a rough square shaped electrode with each side consisted of the sum of the minimum length (R) of the electrode necessary for wire-bonding and the minimum length (F) of the electrode protective film and the center of the adjacent central-line electrode, and having a hypotenuse on the pellet side formed in the symmetrical position with the central-line electrode and parallel to the hypotenuse on the central-line electrode side in the pellet side direction,
• the central-line electrode configures an octagonal electrode having a hypotenuse on the inside-line electrode side formed to cut vertically on the position at a distance of the sum of the minimum length (R) of the electrode necessary for wire-bonding and the minimum length (F) of the electrode protective film from the center of the electrode on the line connecting the center of a rough square shaped electrode with each side consisted of the sum of the minimum length (R) of the electrode necessary for wire-bonding and the minimum length (F) of the electrode protective film and the center of the adjacent inside-line electrode, and having a hypotenuse on the outside-line electrode side formed in the symmetrical position with the inside-line electrode and parallel to the hypotenuse on the inside-line electrode side in the opposite direction of the pellet side;
• and
• the maximum wiring width of the outside-line electrode wired intermediately parallel to the hypotenuse of the central-line electrode and the hypotenuse of the inside-line electrode is calculated with a following expression, considering the necessary minimum conductor interval (I) between the central-line electrode and the inside-line electrode;
• the maximum wiring width=(A2+B2)1/2−(R+F+I)×2

A semiconductor device with staggered arrangement in three lines with an inside-line electrode having a lower electrode and an upper electrode which are divided by an insulating film, a central-line electrode having a lower electrode and an upper electrode divided by an insulating film, and an outside-line electrode on the peripheral part of the surface of a semiconductor pellet, wherein;

• the inside-line electrode configures a lower electrode in which a hexagonal electrode is formed having a hypotenuse on the central-line electrode side formed to cut vertically on the position at a distance of the minimum length (R) of the electrode necessary for wire-bonding from the center of the electrode on the line connecting the center of a rough square shaped electrode with each side consisted of the minimum length (R) of the electrode necessary for wire-bonding and the center of the adjacent central-line electrode, and an upper electrode with rough square shaped connected to the lower electrode via a metal pillar formed in the insulating film,
• the central-line electrode configures a lower electrode in which a hexagonal electrode is formed having a hypotenuse on the inside-line electrode side formed to cut vertically on the position at a distance of the minimum length (R) of the electrode necessary for wire-bonding from the center of the electrode on the line connecting the center of a rough square shaped electrode with each side consisted of the minimum length (R) of the electrode necessary for wire-bonding and the center of the adjacent inside-line electrode, and an upper electrode with rough square shaped connected to the lower electrode via a metal pillar formed in the insulating film;
• and
• the maximum wiring width of the outside-line electrode wired intermediately parallel to the hypotenuse of the central-line electrode and the hypotenuse of the inside-line electrode is calculated with a following expression, considering the necessary minimum conductor interval (I) between the central-line electrode and the inside-line electrode;
• the maximum wiring width=(A2+B2)1/2−(R+I)×2

A semiconductor device with staggered arrangement in three lines with an inside-line electrode having a lower electrode and an upper electrode divided by an insulating film, a central-line electrode having a lower electrode and an upper electrode divided by an insulating film, and an outside-line electrode on the peripheral part of the surface of a semiconductor pellet, wherein;

• the inside-line electrode configures a lower electrode consisted of a octagonal electrode having a hypotenuse on the central-line electrode side formed to cut vertically on the position at a distance of the minimum length (R) of the electrode necessary for wire-bonding from the center of the electrode on the line connecting the center of a rough square shaped electrode with each side consisted of the minimum length (R) of the electrode necessary for wire-bonding and the center of the adjacent central-line electrode, and having a hypotenuse on the pellet side formed in the symmetrical position with the central-line electrode and parallel to the hypotenuse on the central-line electrode side on the pellet side direction, and an upper electrode with rough square shaped connected to the lower electrode via a metal pillar formed in the insulating film,
• the central-line electrode configures a lower electrode consisted of a octagonal electrode having a hypotenuse on the inside-line electrode side formed to cut vertically on the position at a distance of the minimum length (R) of the electrode necessary for wire-bonding from the center of the electrode on the line connecting the center of a rough square shaped electrode with each side consisted of the minimum length (R) of the electrode necessary for wire-bonding and the center of the adjacent inside-line electrode, and having a hypotenuse on the pellet side formed in the symmetrical position with the inside-line electrode and parallel to the hypotenuse on the inside-line electrode side on the opposite direction of the pellet side, and an upper electrode with rough square shaped connected to the lower electrode via a metal pillar formed in the insulating film;
• and
• the maximum wiring width of the outside-line electrode wired intermediately parallel to the hypotenuse of the lower electrode of the central-line electrode and the hypotenuse of the lower electrode of the inside-line electrode is calculated with a following expression, considering the necessary minimum conductor interval (I) between the central-line electrode and the inside-line electrode;
• the maximum wiring width=(A2+B2)1/2−(R+I)×2