CMOS image sensor integrated together with memory device
AssigneeHynix Semiconductor Inc.
InventorSang Hoon Park
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Abstract
The present invention relates to a CMOS (Complementary Metal Oxide Silicon) image sensor; and, more particularly, to an image sensor integrated into one chip, together with a memory. The CMOS image sensor according to the present invention comprises: a pixel array formed on a chip, having a plurality of unit pixels; a logic circuit formed on the chip to process signals form the pixel array; and a memory formed on the chip to store outputs from the logic circuit, wherein the pixel array, the logic circuit and the memory are isolated from each other by insulating layers, whereby the pixel array, the logic circuit and the memory are integrated on the same chip.
Claims6
A CMOS image sensor comprising:
- a pixel array formed on a chip, having a plurality of unit pixels;
- a logic circuit formed on the chip to process signals form the pixel array;
- and
- a memory formed on the chip to store outputs from the logic circuit, wherein the pixel array, the logic circuit and the memory are isolated from each other by insulating layers,
- whereby the pixel array, the logic circuit and the memory are integrated on the same chip.
A CMOS image sensor comprising:
- a chip divided into first to third sections;
- a unit pixel array formed on the first section;
- a logic circuit formed on the second section to process signals form the pixel array;
- and
- a memory formed on the third section to store outputs from the logic circuit, wherein the first to third sections are isolated from each other by insulating layers.
Dependencies are inferred from the claim text.