Non-volatile semiconductor memory and method of manufacturing the same

A method of manufacturing a non-volatile semiconductor memory that has a charge capturing region in a gate insulating film formed between a semiconductor substrate and a gate electrode,

• the method comprising the steps of:
• forming grooves in the semiconductor substrate that serves as a first conductive member;
• forming impurity diffusion layers that serve as a second conductive member on the bottom surfaces of the grooves;
• and
• forming the gate insulating film on the semiconductor substrate having the impurity diffusion layers formed thereon, the gate insulating film including a charge capturing film in which the charge capturing region is to be formed.

A method of manufacturing a non-volatile semiconductor memory that has a charge capturing region in a gate insulating film formed between a semiconductor substrate and a gate electrode,

• the method comprising the steps of:
• forming an impurity diffusion layer that serves as a second conductive member on the semiconductor substrate that serves as a first conductive member;
• forming a groove in the semiconductor substrate having the impurity diffusion layer formed thereon;
• and
• forming the gate insulating film on the semiconductor substrate having the groove formed therein, the gate insulating film including a charge capturing film in which the charge capturing region is to be formed.