Electrically-programmable non-volatile memory cell

A process for fabricating an electrically-programmable memory cell programmed by means of injection of channel hot electrons into a charge-storage element capacitively coupled to a memory cell channel for modulating a conductivity thereof depending on a stored amount of charge, comprising:

• forming a first and a second spaced-apart electrode regions in a semiconductor layer, the first and second electrode regions defining a channel region there between, at least one of the first and second electrode regions designed to act as a programming electrode of the memory cell;
• placing a charge-storage layer over the channel region with interposition of a dielectric layer, the charge-storage layer substantially extending from the first to the second electrode regions;
• forming a control electrode capacitively coupled to the charge-storage layer,
• characterized by comprising
• forming the dielectric layer with a reduced thickness in a portion thereof near the at least one programming electrode.

A nonvolatile memory cell, comprising:

• first and second source/drain regions;
• a bulk region disposed between the first and second source/drain regions and having a first portion contiguous with the first source/drain region and having a second portion contiguous with the first portion;
• an insulator disposed on the bulk region, the insulator being thinner over the first portion of the bulk region and being thicker over the second portion of the of the bulk region;
• and
• a charge-trapping layer disposed on the insulator.

A nonvolatile memory cell, comprising:

• first and second source/drain regions;
• a bulk region disposed between the first and second source/drain regions and having first and second end portions respectively contiguous to the first and second source/drain regions and having a center portion disposed between the end portions;
• an insulator disposed on bulk region, the insulator being thinner over the first and second end portions of the bulk region and being thicker over the center portion of the of the bulk region;
• and
• a charge-trapping layer disposed on the insulator.