Semiconductor device and method of fabricating the same

A semiconductor device comprising:

• a gate electrode and a source wiring over an insulating surface;
• a first insulating film over the gate electrode and over the source wiring;
• a semiconductor film over the first insulating film;
• a second insulating film over the semiconductor film;
• a gate wiring connected to the gate electrode over the second insulating film;
• a connection electrode for connecting the source wiring and the semiconductor film together;
• and
• a pixel electrode connected to the semiconductor film.

A semiconductor device comprising:

• a gate electrode and a source wiring over an insulating surface;
• a first insulating film over the gate electrode and over the source wiring;
• a semiconductor film formed over the first insulating film so as to be partly overlapped over the gate electrode;
• a second insulating film over the semiconductor film;
• a gate wiring connected to the gate electrode over the second insulating film;
• a connection electrode for connecting the source wiring and the semiconductor film together;
• and
• a pixel electrode connected to the semiconductor film.

A semiconductor device comprising:

• a gate electrode and a source wiring over an insulating surface;
• a first insulating film over the gate electrode and over the source wiring;
• a semiconductor film provided over the first insulating film so as to include a source region, a drain region and a channel-forming region;
• a second insulating film over the semiconductor film;
• a gate wiring connected to the gate electrode over the second insulating film;
• a connection electrode for connecting the source wiring and the source region together;
• and
• a pixel electrode connected to the drain region.

A semiconductor device comprising:

• a first gate electrode, a second gate electrode and a source wiring over an insulating surface;
• a first insulating film over the first and second gate electrodes and over the source wiring;
• a first semiconductor film having a source region, a drain region and a channel-forming region over the first insulating film;
• a second semiconductor film overlapped over the second gate electrode;
• a second insulating film over the first and second semiconductor films;
• a gate wiring connected to the gate electrode over the second insulating film;
• a connection electrode for connecting the source wiring and the source region together;
• and
• a pixel electrode connected to the drain region and to the second semiconductor film.

A method of fabricating a semiconductor device comprising:

• a first step of forming a gate electrode and a source wiring over an insulating surface;
• a second step of forming a first insulating film over the gate electrode;
• a third step of forming a semiconductor film over the first insulating film;
• a fourth step of forming a second insulating film over the semiconductor film;
• and
• a fifth step of forming, over the second insulating film, a gate wiring connected to the gate electrode, a connection electrode for connecting the source wiring and the semiconductor film together, and a pixel electrode connected to the semiconductor film.

A method of fabricating a semiconductor device comprising:

• a first step of forming a gate electrode and a source wiring over an insulating surface;
• a second step of forming a first insulating film over the gate electrode;
• a third step of forming a semiconductor film on the first insulating film so as to be partly overlapped over the gate electrode;
• a fourth step of forming a second insulating film over the semiconductor film;
• and
• a fifth step of forming, over the second insulating film, a gate wiring connected to the gate electrode, a connection electrode for connecting the source wiring and the semiconductor film together, and a pixel electrode connected to the semiconductor film.

A method of fabricating a semiconductor device comprising:

• a first step of forming a gate electrode and a source wiring over an insulating surface;
• a second step of forming a first insulating film over the gate electrode;
• a third step of forming a semiconductor film over the first insulating film;
• a fourth step of forming a source region and a drain region over the semiconductor film;
• a fifth step of forming a second insulating film over the semiconductor film;
• and
• a sixth step of forming, over the second insulating film, a gate wiring connected to the gate electrode, a connection electrode for connecting the source wiring and the source region together, and a pixel electrode connected to the drain region.

A method of fabricating a semiconductor device comprising:

• a first step of forming a first gate electrode, a second gate electrode and a source wiring over an insulating surface;
• a second step of forming a first insulating film over the first and second gate electrodes;
• a third step of forming, over the first insulating film, a first semiconductor film that overlaps over the first gate electrode and a second semiconductor film that overlaps over the second gate electrode;
• a fourth step of forming a source region and a drain region in the first semiconductor film;
• a fifth step of forming a second insulating film on the semiconductor film;
• and
• a sixth step of forming, over the second insulating film, a gate wiring connected to the gate electrode, a connection electrode for connecting the source wiring and the source region together, and a pixel electrode for connecting the drain region and the second semiconductor film together.