Semiconductor laser device and fabricating method therefor

A semiconductor laser device fabricating method for forming a semiconductor laser device having a plurality of light-emitting regions, the method comprising the steps of:

• forming a first semiconductor laser layer including a buffer layer located in a lowermost position and a contact layer located in an uppermost position on a semiconductor substrate by first-time crystal growth;
• removing a region except for a region that becomes a light-emitting region of the first semiconductor laser layer leaving a rear surface side of the buffer layer remaining;
• forming a second semiconductor laser layer by second-time crystal growth;
• and
• exposing the contact layer of the first semiconductor laser layer by removing a region except for a region that becomes a light-emitting region of the second semiconductor laser layer.

A semiconductor laser device fabricating method for forming a semiconductor laser device having a plurality of light-emitting regions, the method comprising the steps of:

• forming a first semiconductor laser layer including a buffer layer located in a lowermost position and a contact layer located in an uppermost position on a semiconductor substrate by first-time crystal growth;
• removing a region except for a region that becomes a light-emitting region of the first semiconductor laser layer leaving the buffer layer remaining;
• forming a second semiconductor laser layer by second-time crystal growth;
• and
• exposing the contact layer of the first semiconductor laser layer by removing a region except for a region that becomes a light-emitting region of the second semiconductor laser layer.