Methods of gas switching in rapid thermal process for improving the reliability of the insulation layer
AssigneeNational Taiwan University
InventorsChee-Wee Liu, Min-Hung Lee
Life of this patent
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Abstract
A method of gas switching in a rapid thermal process for improving the reliability of an insulation layer is disclosed. The method includes steps of providing a silicon substrate; introducing a process gas; rapidly heating said silicon substrate to a process temperature for producing an insulation layer on said silicon substrate; and immediately stopping introducing said process gas in a moment of switching to reduce said process temperature for preventing said silicon substrate from producing an insulation layer.
Claims16
A method of gas switching in a rapid thermal process for improving a reliability of the insulation layer, comprising steps of:
- (a) providing a silicon substrate;
- (b) introducing a process gas;
- (c) rapidly heating said silicon substrate to a process temperature for producing an insulation layer on said silicon substrate;
- and
- (d) immediately stopping introducing said process gas in a moment of switching to reduce said process temperature for preventing said silicon substrate from producing an insulation layer during the cooling cycle.
Dependencies are inferred from the claim text.