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AssigneeInternational Business Machines Corporation
InventorsDavid M. Fried, Edward J. Nowak, Beth Ann Rainey
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The present invention provides a memory cell and method for forming the same that results in improved cell density without overly increasing fabrication cost and complexity. The preferred embodiment of the present invention provides a fin design to form the memory cell. Specifically, a fin Field Effect Transistor (FET) is formed to provide the access transistor, and a fin capacitor is formed to provide the storage capacitor. By forming the memory cell with a fin FET and fin capacitor, the memory cell density can be greatly increased over traditional planar capacitor designs. Additionally, the memory cell can be formed with significantly less process cost and complexity than traditional deep trench capacitor designs.
A memory cell, the memory cell comprising:
A method for forming a memory cell, the method comprising the steps of:
A memory device comprising:
Dependencies are inferred from the claim text.