Semiconductor light-emitting device using graded multi quantum barrier
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsChikara Watatani, Yoshihiko Hanamaki
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Abstract
In a semiconductor light-emitting device, an active layer has a multi quantum well structure (MQW) that a plurality of barrier layers and a plurality of quantum well layers are alternately arranged. Each of the cladding layers has a multi quantum barrier structure (MQB) that a plurality of barrier layers and a plurality of well layers are alternately arranged. A configuration of the multi quantum barrier (MQB) of each of the cladding layers varies in a graded or stepwise form. Thus, carriers are suppressed from overflowing from the active layer, preventing cut-off of a guided wave mode, increasing a reflectance of electrons entering the energy barriers and improving a temperature characteristic.
Claims6
A semiconductor light-emitting device comprising:
- an active layer for generating a light, the active layer having a multi quantum well structure in which a plurality of barrier layers and a plurality of quantum well layers are alternately arranged;
- and
- a pair of cladding layers which sandwiches the active layer to confine the light within the active layer,
- wherein each of the cladding layers has a multi quantum barrier structure in which a plurality of barrier layers and a plurality of well layers are alternately arranged, and wherein the multi quantum barrier layers of each of the cladding layers are graded in configuration.
Dependencies are inferred from the claim text.