US 2003/0197171 A1 · Semiconductor light-emitting element

Abstract

In a semiconductor light-emitting element, a first DBR and a second DBR, with a specified spacing left between them, form a resonator, and a single quantum well active layer is positioned at the loop of a standing wave within this resonator. The single quantum well active layer is composed of a Ga0.5In0.5P well layer and a pair of (Al0.5Ga0.5)0.5In0.5P barrier layers, which sandwiches the Ga0.5In0.5P well layer therebetween. The impurity concentration of the (Al0.5Ga0.5)0.5In0.5P barrier layers is higher than that of the Ga0.5In0.5P well layer. For example, the impurity concentration of the Ga0.5In0.5P well layer is set to 2×1016 cm−3, while the impurity concentration of the (Al0.5Ga0.5)0.5In0.5P barrier layers is set to 2×1018 cm−3.

Claims11

Dependent claims

A semiconductor light-emitting element comprising:

a first multi-layer reflective film supported by a semiconductor substrate and a second multi-layer reflective film formed above the first multi-layer reflective film at a specified distance from the first multi-layer reflective film;
the first and second reflective films forming a resonator within which a standing wave is generated;
and
a quantum well light-emitting layer formed at a loop of the standing wave within the resonator;
the quantum well light-emitting layer having at least one well layer and barrier layers that sandwich the at least one well layer therebetween;
the barrier layers having an impurity concentration higher than an impurity concentration of the well layer.

3 more elements

Dependencies are inferred from the claim text.

Semiconductor light-emitting element

Life of this patent

Semiconductor light-emitting element

Life of this patent

Abstract

Claims11