Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor, and radiation-emitting semiconductor chip

A method for fabricating a radiation-emitting semiconductor chip, which comprises the steps of:

• providing an epitaxy substrate having a substrate body formed from a material selected from the group consisting of SiC, GaN and sapphire, a bonding layer disposed on the substrate body, and a grown-on layer bonded to the substrate body by the bonding layer;
• depositing a layer sequence forming a thin-film element on the grown-on layer by epitaxy, the thin-film element being based on a III-V nitride semiconductor material;
• joining the thin-film element to a carrier;
• and
• removing the epitaxy substrate from the thin-film element.

A radiation-emitting semiconductor chip, comprising:

• a thin-film element having a plurality of layers formed from a III-V nitride semiconductor material, said thin-film element having an n-conducting side and a p-conducting side;
• an electrically conductive carrier, said p-conducting side of said thin-film element applied to said electrically conductive carrier;
• and
• a contact surface applied on said n-conducting side of said thin-film element, said thin-film element containing a buffer layer being an epitaxy layer adjoining said contact surface, said epitaxy layer formed of an AlGaN-based material and having a first side adjoining said contact surface with a lower Al content than a second side of said epitaxy layer remote from said contact surface, said buffer layer having a plurality of electrically conductive regions made from a different III-V nitride semiconductor material than a remainder of said buffer layer.