Gallium nitride-based semiconductor light emitting device

A method for manufacturing a semiconductor light emitting device comprising the steps of:

• forming an n layer co-extensively on a substrate;
• forming an n++ layer non-extensively and flush on one side of said n layer;
• forming a p+ layer co-extensively on said n++ layer;
• forming a p layer co-extensively on said p+ layer;
• forming a p cladding layer co-extensively on said p layer;
• forming a multiple quantum well (MQW) layer co-extensively on said p cladding layer;
• forming an n cladding layer co-extensively on said MQW layer;
• forming a second n layer co-extensively on said n cladding layer;
• forming an n+ layer co-extensively on said second n layer;
• partially etching said device;
• forming an n-electrode opposite said n++ layer and non-extensively on said n layer;
• and
• forming a second n-electrode non-extensively on said n+ layer.

A semiconductor light emitting diode (LED) comprising:

• an n-type GaN layer formed and disposed co-extensively on a sapphire substrate;
• an n+-GaN layer formed and disposed non-extensively and flush with one side of said n-type GaN layer;
• a p-type GaN layer formed and disposed co-extensively on said n+-GaN layer;
• a multiple quantum well (MQW) layer formed and disposed co-extensively with said p-type GaN layer;
• a second n-type GaN layer formed and disposed co-extensively on said MQW layer;
• an ohmic contact formed opposite said n+-GaN layer non-extensively on said n-GaN layer;
• and
• a second ohmic contact disposed non-extensively upon said n-type GaN layer.

A method for making a semiconductor light emitting diode (LED) comprising the steps of:

• forming an n-type GaN layer co-extensively on a sapphire substrate;
• forming an n+ GaN layer non-extensively and flush with one side of said n-type GaN layer;
• forming a p-type GaN layer co-extensively on said n+ GaN layer;
• forming a multiple quantum well (MQW) layer co-extensively with said p-type GaN layer;
• forming a second n-type GaN layer co-extensively on said MQW layer;
• partially etching said LED;
• forming an ohmic contact opposite said n+ GaN layer non-extensively on said n-GaN layer;
• forming a second ohmic contact non-extensively on said n-type GaN layer.