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US 2003/0197166 A1Published application
Semiconductor Device and Semiconductor Substrate, and Method of Fabricating the Same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMasahiro Ishida, Shinji Nakamura, Kenji Orita, Osamu Imafuji, Masaaki Yuri
Life of this patent
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Abstract
A semiconductor device includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor layered structure grown over the crystalline substrate; and an active region provided at a portion in the semiconductor layer structure above the crystal plane.
Claims22
A semiconductor device, comprising:
- a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface;
- a semiconductor layered structure grown over the crystalline substrate;
- and
- an active region provided at a portion in the semiconductor layer structure above the crystal plane.
1 more element
A semiconductor device, comprising:
- a crystalline substrate;
- a first semiconductor layer provided on the crystalline substrate;
- a second semiconductor layer provided on the first semiconductor layer;
- and
- an active region provided in the second semiconductor layer,
- wherein each of the crystalline substrate and the first semiconductor layer includes a primary surface and a crystal plane provided at least within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface.
3 more elements
Dependencies are inferred from the claim text.