Electron beam exposure apparatus, electron beam exposure method, semiconductor device manufacturing method, and electron beam shape measuring method
AssigneeAdvantest Corporation
InventorAkio Yamada
Life of this patent
Estimating the term…
Abstract
An electron beam exposure apparatus for exposing a wafer by an electron beam, including: an electron beam generation section for generating the electron beam; an electron beam shaping member with a plurality of openings for shaping the electron beam; a deflecting section for deflecting the electron beam which has passed through the electron beam shaping member; and a deflection correction control section for controlling the deflecting section based on a position of the opening of the electron beam shaping member through which the electron beam passes. The deflecting section deflects the electron beam and corrects distortion of an image of the electron beam on the wafer.
Claims17
An electron beam exposure apparatus for exposing a wafer by an electron beam, comprising:
- an electron beam generation section for generating the electron beam;
- an electron beam shaping member with a plurality of openings for shaping the electron beam;
- a deflecting section for deflecting the electron beam which has passed through said electron beam shaping member, said deflecting section deflecting the electron beam and corrects distortion of an image of the electron beam on the wafer;
- and
- a deflection correction control section for controlling said deflecting section based on a position of the opening of said electron beam shaping member through which the electron beam passes.
An electron beam exposure method for exposing a wafer by an electron beam, comprising steps of:
- generating the electron beam;
- shaping the electron beam by an electron beam shaping member with a plurality of openings for shaping the electron beam;
- correcting distortion of an image of the electron beam on the wafer and controlling the amount of deflection correction of the electron beam based on a position of the opening in the electron beam shaping member through which the electron beam passes;
- and
- deflecting and correcting the electron beam which has passed through the electron beam shaping member based on the amount of deflection correction, and exposing the wafer.
A semiconductor device manufacturing method of exposing a wafer by an electron beam and manufacturing a semiconductor device, comprising steps of:
- generating the electron beam;
- shaping the electron beam by an electron beam shaping member with a plurality of openings for shaping the electron beam;
- correcting distortion of an image of the electron beam on the wafer and controlling the amount of deflection correction of the electron beam based on a position of the opening in the electron beam shaping member through which the electron beam passes;
- and
- deflecting and correcting the electron beam which has passed through the electron beam shaping member based on the amount of deflection correction, and exposing the wafer.
An electron beam shape measuring method of measuring a cross-sectional shape of an electron beam:
- comprising steps of:
- generating the electron beam;
- shaping the cross-sectional shape of the electron beam;
- scanning the electron beam and irradiating the electron beam on a mark;
- and
- measuring the cross-sectional shape of the electron beam based on the electron beam irradiated on the mark.
Dependencies are inferred from the claim text.