Method and apparatus for measuring inclination angle of ion beam

A method for measuring an inclination angle of an ion beam, comprising:

• a) installing a Faraday cup assembly in an advancing path of the ion beam supplied from an ion source to receive the ion beam;
• b) measuring a first variation of the ion current caused by the ion beam received in the Faraday cup assembly by rotating the Faraday cup assembly about a horizontal axis, which is vertically crossed with a vertical plane including a central axis of the ion source and passes through the Faraday cup assembly;
• c) detecting a first maximum value of the ion current from the first variation and calculating a first inclination angle of the ion beam based on a first rotation angle, which corresponds to the first maximum value, of the Faraday cup assembly rotated about the horizontal axis;
• d) measuring a second variation of the ion current by rotating the Faraday cup assembly about a vertical axis, which passes through a cross point of the central axis of the ion source and the horizontal axis;
• and
• e) detecting a second maximum value of the ion current based on the second variation, and calculating a second inclination angle of the ion beam based on a second rotation angle, which corresponds to the second maximum value, of the Faraday cup assembly rotated about the vertical axis.

A method for implanting ions, comprising:

• a) receiving an ion beam supplied from an ion source;
• b) measuring a variation of an ion current of the ion beam while varying an angle at which the ion beam is received;
• c) calculating an inclination angle of the ion beam based on an angle of the received ion beam and the variation of the ion current;
• d) placing a wafer having a critical angle corrected according to the inclination angle of the ion beam in an advancing path of the ion beam;
• and
• e) implanting ions of the ion beam into an entire surface of the wafer while moving the wafer.

An apparatus for measuring an inclination angle of an ion beam, comprising:

• a first means for receiving the ion beam supplied from an ion source, and for measuring an ion current of the received ion beam;
• a second means for varying an alignment angle of the first means to adjust an amount of the ion beam received in the first means;
• and
• a third means for calculating the inclination angle of the ion beam based on the alignment angle of the first means and the variation of the ion current caused by the variation of the alignment angle of the first means.

An apparatus for measuring an inclination angle of an ion beam, comprising:

• a Faraday cup assembly installed on an advancing path of the ion beam supplied from an ion source to receive the ion beam;
• a current/voltage converting means for converting an ion current generated from the Faraday cup assembly due to the ion beam into an ion voltage;
• a voltage measuring section for measuring the ion voltage;
• a driving means for rotating the Faraday cup assembly about a horizontal axis, which is vertically crossed with a vertical plane including the central axis of the ion source and passes through the Faraday cup assembly, to vary a first alignment angle of the Faraday cup assembly and for rotating the Faraday cup assembly about a vertical axis, which passes through a cross point of the central axis of the ion source and the horizontal axis, to vary a second alignment angle of the Faraday cup assembly;
• an angle measuring means for measuring a first rotation angle of the Faraday cup assembly rotated about the horizontal axis and a second rotation angle of the Faraday cup assembly rotated about the vertical axis;
• a data analyzing section connected to the voltage measuring section for detecting first and second maximum values of ion current measuring data by analyzing first and second variations of the ion current measuring data corresponding to the first and second alignment angles of the Faraday cup assembly and for calculating the inclination angle of the ion beam based on the first and second rotation angles corresponding to the first and second maximum values;
• and
• an angle adjusting section for generating a control signal to adjust the first and second alignment angles of the Faraday cup assembly.

An ion implantation apparatus, comprising:

• an ion implantation chamber for performing an ion implantation process with respect to a wafer and including a chuck for gripping the wafer;
• an ion source connected to the ion implantation chamber for supplying an ion beam including ions into the ion implantation chamber;
• an ion current measuring means installed in an advancing path of the ion beam when measuring an inclination angle of the ion beam for receiving the ion beam and for measuring an ion current of the ion beam received therein;
• an angle varying means for varying an alignment angle of the ion current measuring means so as to adjust an amount of the ion beam received in the ion current measuring means;
• an inclination angle calculating means for calculating the inclination angle of the ion beam based on the alignment angle of the ion current measuring means and a variation of the ion current caused by a variation of the alignment angle of the ion current measuring means;
• a first driving means for driving the ion current measuring means up and down;
• and
• a second driving means for placing the wafer in the advancing path of the ion beam while ions are being implanted into the wafer, rotating the wafer with a critical angle corrected according to the inclination angle of the ion beam, and moving the wafer for allowing ions to be implanted into a whole area of the wafer.