Apparatus for detecting impurities in material and detecting method therefor
AssigneeJapan Tobacco Inc.
InventorsKiyomis Sato, Tsuyoshi Futamura, Shinzo Kida
Life of this patent
Estimating the term…
Abstract
In an apparatus and a method for detecting impurities in a material, infrared rays or a plurality of specific wavelength components of the infrared rays are applied to a material on a conveyor, the respective reflection intensities of the specific wavelength components reflected by the material are measured, the measured reflection intensities and the reflection intensities of specific wavelength components inherent to the material are compared, and impurities in the material are detected according to the result of the comparison.
Claims14
A detecting apparatus for detecting a plurality of kinds of impurities in a material consisting of harvest plants in bulk, said detecting apparatus comprising:
- an illuminating device for applying infrared rays to the material when the material is transported;
- a receiving device for receiving said infrared rays reflected by the material and outputting reflection intensity of a first wavelength component of said reflection infrared rays, the first wavelength component being selected from a first wavelength region of 1,800 nm and over and less than 2,500 nm;
- and
- a decision device for comparing the reflection intensity of said first wavelength component with a first reference value and detecting said impurities in the material on the basis of the result of the comparison, the first reference value being set on the basis of reference reflection intensity of the first wavelength component reflected by the material itself.
A method for detecting a plurality of kinds of impurities in a material consisting of harvest plants in bulk, said method comprising the step of:
- applying infrared rays to the material when the material is transported;
- receiving said infrared rays reflected by the material;
- outputting a reflection intensity of a first wavelength component of said reflection infrared rays, the first wavelength component being selected from a first wavelength region of 1,800 nm and over and less than 2,500 nm;
- and
- comparing the reflection intensity of said first wavelength component with a first reference value and detecting said impurities in the material on the basis of the result of the comparison, the first reference value being set on the basis of reference reflection intensity of the first wavelength component reflected by the material itself.
Dependencies are inferred from the claim text.