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US 2003/0197115 A1Published application
Photodectector and method for fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorKenichi Matsuda
Life of this patent
Estimating the term…
Abstract
A photodetector includes semiconductor conductive layer, light-absorbing layer and wide bandgap layer, which are stacked in this order on a semi-insulating semiconductor substrate. The conductive layer has been formed on a surface region of the substrate. The photodetector further includes a doped region defined in part of the wide bandgap layer. The conductive layer has etch susceptibility different from that of the substrate.
Claims18
A photodetector comprising:
- a semi-insulating semiconductor substrate;
- a semiconductor conductive layer, which has been formed on a surface region of the substrate and has electrical conductivity;
- a light-absorbing layer, which has been formed on the conductive layer and absorbs light that has been incident on the photodetector;
- a wide bandgap layer, which has been formed on the light-absorbing layer and has a bandgap wider than a bandgap of the light-absorbing layer;
- and
- a doped region, which has been defined in the wide bandgap layer by doping part of the wide bandgap layer with a dopant that reaches the light-absorbing layer,
- wherein the conductive layer has etch susceptibility different from that of the substrate.
4 more elements
A photodetector comprising:
- a semi-insulating semiconductor substrate;
- a semiconductor conductive layer, which has been formed on a surface region of the substrate and has electrical conductivity;
- a light-absorbing layer, which absorbs light that has been incident on the photodetector;
- a carrier barrier layer, which has been formed between the conductive and light-absorbing layers to prevent carriers, created in the conductive layer, from diffusing and entering the light-absorbing layer;
- a wide bandgap layer, which has been formed on the light-absorbing layer and has a bandgap wider than a bandgap of the light-absorbing layer;
- and
- a doped region, which has been defined in the wide bandgap layer by doping part of the wide bandgap layer with a dopant that reaches the light-absorbing layer,
- wherein the conductive layer is made of InGaAsP and transmits part of the incident light with a particular wavelength.
5 more elements
A photodetector comprising:
- a semi-insulating semiconductor substrate;
- a semiconductor conductive layer, which has been formed on a surface region of the substrate and has electrical conductivity;
- a light-absorbing layer, which has been formed on the conductive layer and absorbs light that has been incident on the photodetector;
- a wide bandgap layer, which has been formed on the light-absorbing layer and has a bandgap wider than a bandgap of the light-absorbing layer;
- a doped region, which has been defined in the wide bandgap layer by doping part of the wide bandgap layer with a dopant that reaches the light-absorbing layer;
- and
- an electrode, which has been formed on the doped region,
- wherein a semiconductor multilayer structure, including the semiconductor conductive, light-absorbing and wide bandgap layers, has been formed on said surface region of the substrate, and
- wherein a second semiconductor conductive layer has been formed on another surface region of the substrate and is electrically isolated from the conductive layer included in the multilayer structure, and
- wherein a pad for use to electrically connect the photodetector to an external unit has been formed on the second conductive layer, and
- wherein the multilayer structure is covered with an insulating film, and
- wherein an interconnect has been formed on the insulating film to electrical connect the electrode and the pad together, and
- wherein the insulating film is a stack of an SiN layer and an SiO2 layer that has been deposited on the SiN layer.
10 more elements
Dependencies are inferred from the claim text.