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US 2003/0196993 A1Published application
Thermal flux deposition by scanning
AssigneeApplied Materials, Inc.
InventorDean Jennings
Life of this patent
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AssigneeApplied Materials, Inc.
InventorDean Jennings
Estimating the term…
A substrate is initially positioned in the reaction chamber. One or more gases are introduced into the reaction chamber. A predetermined speed for translating a line of radiation is determined. Continuous wave electromagnetic radiation is then emitted from a continuous wave radiation source. The continuous wave electromagnetic radiation is subsequently focused into a line of radiation extending across the surface of the substrate. The line of radiation is then translated relative to the surface at the constant predetermined speed. The combination of the introduced gas/es and heat generated by the line of radiation causes the gas/es to react and deposit a layer on the surface of the substrate. Undesirable byproducts of the reaction are then flushed from the reaction chamber. This process is repeated until a layer having a predetermined thickness is formed on the surface of the substrate.
An apparatus for depositing layers on a substrate, comprising:
A method for depositing a layer on a substrate, comprising:
A thermal flux processing device, comprising:
A method for thermally processing a substrate, comprising:
A method for thermally processing a substrate, comprising scanning an upper surface of a substrate with a line of continuous wave electromagnetic radiation at a constant predetermined speed such that every point of said substrate has a substantially homogenous thermal exposure.
Dependencies are inferred from the claim text.