Highly heat-resistant plasma etching electrode and dry etching device including the same

Abstract

A plasma etching electrode for dry etching devices for production of semiconductor devices. The plasma etching electrode is prevented from contamination with impurities, provides good thermal and electrical conductance and heat resistance at the joint between the electrode plate and pedestal (or supporting ring), and hence improves etching characteristics and silicon wafer yield. The highly heat-resistant plasma etching electrode includes an electrode plate of silicon which is supported by and uniformly joined to a pedestal by an adhesive. The pedestal is made of graphite. The adhesive includes an epoxy resin containing polycarbodiimide resin and carbon powder. A dry etching device including the electrode is also described.

Dependencies are inferred from the claim text.