US 2003/0195312 A1 · Chemically and electrically stabilized polymer films

Abstract

Preparation methods and stabilization processes for low k polymers that consist of sp2C—X and HC-sp3Cα—X bonds. A preparation method is achieved by controlling the substrate temperature and feed rate of the polymer precursors. One stabilization process includes a post annealing of as-deposited polymer films under the presence of hydrogen under high temperatures. The reductive annealing of these films is conducted at temperatures from −20° C. to −50° C. to +20° C. to +50° C. of their Reversible Crystal Transformation (“CRT”) temperatures, then quenching the resulting films to −20° C. to −50° C. below their “CRT” temperatures. The reductive annealing is conducted before the as-deposited film was removed from a deposition system and still under the vacuum. “Re-stabilization” processes of polymer surfaces that are exposed to reactive plasma etching are also disclosed; thus, further coating by barrier metal, cap layer or etch-stop layer can be safely applied.

Claims54

Dependent claims

A dielectric thin film prepared by transport polymerization (“TP”) from a precursor with a reactive diradical intermediate that has a general structure (I):

1
wherein, X comprises hydrogen, fluorine or a fluorinated phenyl;
Ar comprises an aromatic moiety;
e comprises a free radical having an unpaired electron;
no comprises an integer of at least 2, but is less than total sp2 carbons on the aromatic moiety;
and
wherein the dielectric thin film is prepared under a vacuum with a low system-leakage-rate, an inert atmosphere, or both.

4 more elements

Dependencies are inferred from the claim text.

Chemically and electrically stabilized polymer films

Life of this patent

Chemically and electrically stabilized polymer films

Life of this patent

Abstract

Claims54