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AssigneeApplied Materials, Inc.
InventorsVinita Singh, Srinivas D. Nemani, Yi Zheng, Lihua Li, Tzu-Fang Huang, Li-Qun Xia, Ellie Yieh
Estimating the term…
A method for depositing a low dielectric constant film having a dielectric constant of about 3.5 or less is provided by blending one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, and one or more low molecular weight aliphatic hydrocarbon compounds. In one aspect, a gas mixture comprising one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, one or more aliphatic hydrocarbon compounds, one or more oxidizing gases, and a carrier gas is reacted at conditions sufficient to deposit a low dielectric constant film on a substrate surface.
A method for depositing a low dielectric constant film having a dielectric constant of about 3.5 or less, comprising reacting a gas mixture comprising:
A method for depositing a low dielectric constant film having a dielectric constant of about 3.5 or less, comprising reacting a gas mixture comprising:
Dependencies are inferred from the claim text.
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Containing silicon: the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
Characterised by the deposition of inorganic material, other than metallic material: deposition of compounds, mixtures or solid solutions, e.g.…
Oxides: containing silicon
The precursor containing a compound comprising Si: the compound being a silane, e.g. disilane, methylsilane or chlorosilane
Term end not estimated
1. Field of the Invention
Embodiments of the present invention relate to the fabrication of integrated circuits. More particularly, embodiments of the present invention relate to a process for depositing dielectric layers on a substrate.
2. Description of the Related Art
The following examples illustrate low dielectric films of other processes and of embodiments of the present invention. The films were deposited using a chemical vapor deposition chamber that is part of an integrated processing platform. In particular, the films were deposited using a 300 mm Producer® system, available from Applied Materials, Inc. of Santa Clara, Calif. The flowrates in the examples are given with respect to the total flow to the Producer® system, i.e., the total flow to both of the processing regions, which may each contain one 300 mm substrate. The flowrates per substrate or processing region (not listed) are approximately half of the flowrates of the examples.
Comparative Example 1:
A low dielectric constant film was deposited on a 300 mm substrate from the following reactive gases at a chamber pressure of about 3 Torr and substrate temperature of about 400° C. with the following flowrates: