Method of manufacturing semiconductor device package

#1. Field of the Invention

#The present invention relates to a method of manufacturing a semiconductor device package, and more particularly to a method of manufacturing a semiconductor device package, in which an electrode surface is formed on a conductive layer of a conductive substrate, thereby miniaturizing the semiconductor device package and simplifying its manufacturing process.

#2. Description of the Related Art

#The above and other objects, features and other advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

#FIG. 1 is a cross-sectional view of a conventional semiconductor device package;

#FIG. 2 is a cross-sectional view of a semiconductor device package, which is obtained by a manufacturing method in accordance with the present invention; and

#Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the annexed drawings.

#FIG. 2 is a cross-sectional view of a diode package 60, which is obtained by a manufacturing method in accordance with the present invention.

#With reference to FIG. 2, the diode package 60 comprises a diode 50. The diode 50 comprises an upper terminal 55 formed on its upper surface and a lower terminal (not shown) formed on its lower surface. Herein, the lower terminal is formed throughout the whole lower surface of the diode 50. Similarly to the conventional semiconductor device package of FIG. 1, the lower terminal of the diode 50 is directly mounted on a connection bump 38b, and the upper terminal 55 of the diode 50 is connected to another connection bump 38a by a wire 47. Herein, gold (Au) plating layers 46a and 46b are formed on each of the connection bumps 38a and 38b, thereby forming a conductive layer of high quality on the connection bumps 38a and 38b.