Methods for transistors formation using selective gate implantation
AssigneeTexas Instruments Incorporated
InventorsF. Scott Johnson, Tad Grider, Benjamin P. McKee
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Abstract
Methods are disclosed for semiconductor device fabrication in which dopants are selectively implanted into transistor gate structures to counteract or compensate for dopant depletion during subsequent fabrication processing. A patterned implant mask is formed over a semiconductor device, which exposes at least a portion of the gate structure and covers the remaining upper surfaces of the device. Thereafter, dopants are selectively implanted into the exposed gate structure.
Claims26
A method of fabricating a semiconductor device, comprising:
- forming a patterned implant mask over a semiconductor device, the implant mask exposing at least a portion of a gate structure and covering remaining upper surfaces of the semiconductor device;
- and
- selectively implanting dopants into an exposed portion of the gate structure.
A method of forming a transistor gate in a semiconductor device, the method comprising:
- forming a gate structure over a semiconductor substrate;
- forming a film over the semiconductor device;
- exposing at least a portion of the gate structure through the film;
- and
- selectively implanting dopants into the exposed portion of the gate structure.
A method of fabricating a semiconductor device, comprising
- forming a gate structure over a semiconductor substrate;
- performing a first implantation to provide dopants to prospective source/drain regions in the substrate;
- performing a second implantation to selectively provide dopants into the gate structure substantially without providing dopants to the prospective source/drain regions;
- and
- performing a third implantation to provide dopants to the prospective source/drain regions.
Dependencies are inferred from the claim text.