Method for producing group III nitride compound semiconductor device
AssigneeToyoda Gosei Co., Ltd.
InventorToshiaki Chiyo
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Abstract
A method of producing a Group III nitride compound semiconductor device, has the following steps of: forming an n-type layer on a substrate; forming a layer containing a light emitting layer on the n-type layer; forming a p-type layer being doped with a p-type impurity on the layer; etching at least a portion of the n-type layer and at least a portion of the layer to reveal at least a part of the n-type layer and an end surface of the layer; forming a p-electrode on a surface side of the p-type layer; forming an n-electrode on the revealed part of the n-type layer; irradiating the p-type layer with an electron beam to make resistance of the p-type layer low; and acidizing at least the revealed end surface of the layer after the electron beam irradiating step.
Claims4
A method of producing a Group III nitride compound semiconductor device, comprising steps of:
- forming an n-type layer on a substrate;
- forming a layer containing a light emitting layer on said n-type layer;
- forming a p-type layer being doped with a p-type impurity on said layer;
- etching at least a portion of said n-type layer and at least a portion of said layer to reveal at least a part of said n-type layer and an end surface of said layer;
- forming a p-electrode on a surface side of said p-type layer;
- forming an n-electrode on said revealed part of said n-type layer;
- irradiating said p-type layer with an electron beam to make resistance of said p-type layer low;
- and
- acidizing at least said revealed end surface of said layer after said electron beam irradiating step.
Dependencies are inferred from the claim text.