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US 2003/0194825 A1Published application
Deposition of gate metallization for active matrix liquid crystal display (AMLCD) applications
OwnerKam Law, Quan Yuan Shang +2inventors
InventorsKam Law, Quan Yuan Shang, William Reid Harshbarger, Dan Maydan
Life of this patent
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Abstract
A method of gate metal layer deposition using a cyclical deposition process for thin film transistor applications is described. The cyclical deposition process comprises alternately adsorbing a metal-containing precursor and a reducing gas on a substrate. Thin film transistors, such as a bottom-gate transistor or a top-gate transistor, including a gate layer, may be formed using such cyclical deposition techniques.
Claims72
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
- providing a substrate having a dielectric layer deposited over source regions and drain regions formed thereon;
- and
- depositing a gate metal layer on the dielectric layer using a cyclical deposition process comprising a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas to a process chamber and modulating the flow of the inert gas with an alternating period of exposure to one of either a metal-containing precursor and a reducing gas.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
- providing a substrate;
- depositing a gate metal layer on the substrate using a cyclical deposition process comprising a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas to a process chamber and modulating the flow of the inert gas with an alternating period of exposure to one of either a metal-containing precursor and a reducing gas;
- defining one or more gates in the gate metal layer;
- and
- forming source regions and drain regions over the one or more gates defined in the gate metal layer.
2 more elements
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
- providing a substrate;
- and
- depositing a gate metal layer on the substrate using a cyclical deposition process comprising a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas to a process chamber and modulating the flow of the inert gas with an alternating period of exposure to one of either a metal-containing precursor and a reducing gas.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
- providing a substrate;
- and
- depositing a gate metal layer on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to one of a metal-containing precursor and a reducing gas, and wherein the period of exposure to the metal-containing precursor, the period of exposure to the reducing gas, a period of flow of the inert gas between the period of exposure to the metal-containing precursor and the period of exposure to the reducing gas, and a period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the metal-containing precursor each have the same duration.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
- providing a substrate;
- and
- depositing a gate metal layer on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to one of a metal-containing precursor and a reducing gas, and wherein at least one of the period of exposure to the metal-containing precursor, the period of exposure to the reducing gas, a period of flow of the inert gas between the period of exposure to the metal-containing precursor and the period of exposure to the reducing gas, and a period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the metal-containing precursor has a different duration.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
- providing a substrate;
- and
- depositing a gate metal layer on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to one of a metal-containing precursor and a reducing gas, wherein the period of exposure to the metal-containing precursor, the period of exposure to the reducing gas, a period of flow of the inert gas between the period of exposure to the metal-containing precursor and the period of exposure to the reducing gas, and a period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the metal-containing precursor each have the same duration, and wherein the period of exposure to the metal-containing precursor, the period of exposure to the reducing gas, the period of flow of the inert gas between the period of exposure to the metal-containing precursor and the period of exposure to the reducing gas, and the period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the metal-containing precursor each have the same duration during each deposition cycle of the cyclical deposition process.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
- providing a substrate;
- and
- depositing a gate metal layer on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to one of a metal-containing precursor and a reducing gas, wherein the period of exposure to the metal-containing precursor, the period of exposure to the reducing gas, a period of flow of the inert gas between the period of exposure to the metal-containing precursor and the period of exposure to the reducing gas, and a period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the metal-containing precursor each have the same duration, and wherein at least one of the period of exposure to the metal-containing precursor, the period of exposure to the reducing gas, the period of flow of the inert gas between the period of exposure to the metal-containing precursor and the period of exposure to the reducing gas, and the period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the metal-containing precursor has a different duration during one or more deposition cycles of the cyclical deposition process.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
- providing a substrate;
- and
- depositing a gate metal layer on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to one of a metal-containing precursor and a reducing gas, wherein at least one of the period of exposure to the metal-containing precursor, the period of exposure to the reducing gas, a period of flow of the inert gas between the period of exposure to the metal-containing precursor and the period of exposure to the reducing gas, and a period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the metal-containing precursor has a different duration, and wherein the period of exposure to the metal-containing precursor, the period of exposure to the reducing gas, the period of flow of the inert gas between the period of exposure to the metal-containing precursor and the period of exposure to the reducing gas, and the period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the metal-containing precursor each have the same duration during each deposition cycle of the cyclical deposition process.
A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
- providing a substrate;
- and
- depositing a gate metal layer on the substrate using a cyclical deposition process, wherein the cyclical deposition process includes a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas in a process chamber and modulating the flow of the inert gas with alternating periods of exposure to one of a metal-containing precursor and a reducing gas, wherein at least one of the period of exposure to the metal-containing precursor, the period of exposure to the reducing gas, a period of flow of the inert gas between the period of exposure to the metal-containing precursor and the period of exposure to the reducing gas, and a period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the metal-containing precursor has a different duration, and wherein at least one of the period of exposure to the metal-containing precursor, the period of exposure to the reducing gas, the period of flow of the inert gas between the period of exposure to the metal-containing precursor and the period of exposure to the reducing gas, and the period of flow of the inert gas between the period of exposure to the reducing gas and the period of exposure to the silicon-containing precursor has a different duration during one or more deposition cycles of the cyclical deposition process.
A method of forming a gate metal layer on a substrate, comprising:
- providing a substrate;
- and
- depositing a gate metal layer on the substrate using a cyclical deposition process comprising a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas to a process chamber and modulating the flow of the inert gas with an alternating period of exposure to one of either a metal-containing precursor and a reducing gas.
A transistor for use in an active matrix liquid crystal display (AMLCD), comprising:
- a substrate a gate metal layer formed thereon, the gate metal layer is formed using a cyclical deposition process comprising a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas to a process chamber and modulating the flow of the inert gas with an alternating period of exposure to one of either a metal-containing precursor and a reducing gas.
Dependencies are inferred from the claim text.