Method for manufacturing resist pattern

Abstract

The main object of the present invention is to provide a method for manufacturing a high precision resist pattern upon use of a chemical amplification-type resist and a conductive film. The present invention attains the above object by providing a method for manufacturing a resist pattern comprising: an irradiating process of irradiating a substrate having, a chemical amplification-type resist layer on one surface of a base, and a conductive film which is formed on the chemical amplification-type resist layer and releases an acid by heating, with an electron beam in a pattern manner from the conductive film side, a conductive film removing process of removing the conductive film from the substrate which is irradiated with an electron beam, a post-exposure baking process of subjecting the substrate, from which the conductive film is removed, to post-exposure baking, and a developing process of performing development on the substrate which is subjected to post-exposure baking, to form a pattern having the chemical amplification-type resists.

Drawings

Dependencies are inferred from the claim text.