Ion-beam deposition process for manufacture of binary photomask blanks
AssigneeE. I. Du Pont de Nemours and Company
InventorsPeter Francis Carcia, Laurent Dieu
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Abstract
An ion-beam film deposition process is described for fabricating binary photomask blanks for selected lithographic wavelengths <400 nm, the said film essentially consisting of the MOxCyNz compound where M is selected from chromium, molybdenum, tungsten, or tantalum or combination thereof in a single layer or a multiple layer configuration.
Claims5
A dual ion-beam deposition process for preparing a binary photo mask blank for lithographic wavelengths less than 400 nanometer, the process comprising depositing at least one layer of a MOxCyNz compound, where M is selected from chromium, molybdenum, tungsten, or tantalum or combination thereof, on a substrate;
- (a) by ion beam deposition of chromium, molybdenum, tungsten, or tantalum and/or a compound thereof by ions from a group of gases, and
- (b) by bombarding the said substrate by a secondary ion beam from an assist source of a group of gases wherein the layer or the layers are formed by a chemical combination of the bombarding gas ions from the assist source gas with the material deposited from the target or targets onto the substrate;
- wherein:
- x ranges from about 0.00 to about 3.00;
- y ranges from about 0.00 to about 1.00;
- and z ranges from about 0.00 to about 2.00.
Dependencies are inferred from the claim text.