Loading patent…
AssigneeSanyo Electric Co., Ltd.
InventorsYuji Hamada, Noriyuki Matsusue, Kazuki Nishimura
Estimating the term…
A luminescent material for light emitting device represented by the following general formula (1) or (2). 1 (wherein R1, R2 and R3 are H, CnH2n+1 (n is an integer of 1 to 10), N(CnH2n+1)2 (n is an integer of 1 to 10), COOCnH2+1 (n is an integer of 1 to 10), F, Cl, Br, I, CN, a phenyl group, a naphthyl group or the like, and D is a ligand represented by the following general formula (17) or (18).) 2 wherein R4, R5 and R6 are H, CnH2n+1 (n is an integer of 1 to 10), N(CnH2n+1)2 (n is an integer of 1 to 10), COOCnH2+1(n is an integer of 1 to 10), F, Cl, Br, I, CN, CF3, a furyl group, a thienyl group, a phenyl group, a napthyl group or the like.).
A luminescent material for light emitting device represented by any one of the following general formulae (1) to (16):
Dependencies are inferred from the claim text.
Drawings are temporarily unavailable. Open the PDF at USPTO
From the US filing history. Foreign family members aren’t listed.
Backward citations are indexed for grants only.
Luminescent materials, e.g. electroluminescent or chemiluminescent: containing organic luminescent materials
Compounds of the platinum group: iridium compounds
Transition metal complexes, e.g. Rupolypyridine complexes: comprising iridium
Non-macromolecular compounds: carbocyclic compounds
Term end not estimated
1. Field of the Invention
The present invention relates to a luminescent material used for light emitting devices such as organic electroluminescent (EL) devices and electrochemiluminescent (ECL) devices.
2. Related Art
An anode made of ITO was formed on a glass substrate, and a hole transfer layer, a luminescent layer, a hole preventive layer, an electron transfer layer and a cathode were formed thereon by vacuum deposition, to thereby produce an organic EL device having a device structure of anode/hole transfer layer/luminescent layer/hole preventive layer/electron transfer layer/cathode.
As the anode, an ITO film having a film thickness of 1000 Å was formed. As the hole transfer layer, an NPB layer having a thickness of 500 Å was formed. As the luminescent layer, a layer of CBP serving as a host to which 6.5% by weight of dopant was added was formed so as to have a thickness of 100 Å. As the hole preventive layer, a BCP layer having a thickness of 100 Å was formed. As the electron transfer layer, an Alq layer having a thickness of 300 Å was formed. As the cathode, a MgIn layer having a thickness of 2000 Å was formed.
As the dopant to be contained in the luminescent layer, Compounds 1 to 14 which are the luminescent materials of the present invention and represented by the following general formulae were used. 8