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AssigneeApplied Materials, Inc.
InventorsLihua Li, Wen H. Zhu, Tzu-Fang Huang, Li Qun Xia, Ellie Yieh
Estimating the term…
A method for depositing a low dielectric constant film having a dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided by using one or more cyclic organic precursors and one or more aliphatic precursors. In one aspect, a cyclic organosilicon compound, an aliphatic organosilicon, and an aliphatic hydrocarbon compound are reacted with an oxidizing gas at conditions sufficient to deposit a low dielectric constant film on the semiconductor substrate. The cyclic organosilicon compound includes at least one silicon-carbon bond. The aliphatic organosilicon compound includes a silicon-hydrogen bond or a silicon-oxygen bond.
A method for depositing a low dielectric constant film having a dielectric constant of about 3.0 or less, comprising:
A method for depositing a low dielectric constant film having a dielectric constant of about 3.0 or less, comprising:
Dependencies are inferred from the claim text.
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Coating compositions
Oxides: containing silicon
The precursor containing a compound comprising Si: the compound being a silane, e.g. disilane, methylsilane or chlorosilane
Using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition: in the presence of a plasma [PECVD]
Term end not estimated
1. Field of the Invention
Embodiments of the present invention relate to the fabrication of integrated circuits. More particularly, embodiments of the present invention relate to a process for depositing dielectric layers on a substrate.
2. Background of the Invention
So that the manner in which the above recited features of the present invention are attained and can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings.
It is to be noted, however, that the description and appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
FIG. 1 is a cross-sectional diagram of an exemplary CVD reactor configured for use according to embodiments described herein.
Embodiments of the invention include a significant and unexpected reduction in dielectric constants for films containing silicon, oxygen, and carbon by blending one or more cyclic organosilicon compounds and one or more aliphatic compounds with an oxidizing gas at conditions sufficient to form an ultra low dielectric constant film (k less than 2.5). The films contain a network of —Si—O—Si— ring structures that are crosslinked with one or more linear organic compounds. Because of the crosslinkage, a reactively stable network is produced having a significant separation between ring structures and thus, the deposited films possess a significant degree of porosity.
The cyclic organosilicon compounds include a ring structure having three or more silicon atoms and the ring structure may further comprise one or more oxygen atoms. Commercially available cyclic organosilicon compounds include rings having alternating silicon and oxygen atoms with one or two alkyl groups bonded to the silicon atoms. For example, the cyclic organosilicon compounds may include one or more of the following compounds:
1,3,5-trisilano-2,4,6-trimethylene, —(—SiH2CH2—)3— (cyclic)