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US 2003/0193819 A1Published application
Power semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsToru Iwagami, Shinya Shirakawa
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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsToru Iwagami, Shinya Shirakawa
Estimating the term…
A power semiconductor device includes a half bridge circuit, a control circuit and a noise removal circuit. The half bridge circuit includes a switching element on a low voltage side and a switching element on a high voltage side, those switching elements serially connected. The control circuit controls a switching operation of the switching element on a low voltage side in the half bridge circuit. The control circuit has a supply-voltage receiving terminal connected to a high voltage side of a power supply for driving the control circuit. The noise removal circuit including, for example, a zener diode, is interposed between the supply-voltage receiving terminal of the control circuit and the low voltage side terminal of the switching element on a low voltage side, to remove noise generated on a conductor connected to a low voltage side terminal of the switching element on a low voltage side.
A power semiconductor device comprising:
A power semiconductor device comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Backward citations are indexed for grants only.
Arrangements or adaptations of power supply systems: using radiation, e.g. deployable solar arrays
Electronic switching or gating, i.e. not by contact-making and –breaking: modifications for eliminating interference voltages or currents
By feedback from the output to the control circuit: in bipolar transistor switches
Cosmonautics
Term end not estimated
1. (Field of the Invention)
The present invention relates to a power semiconductor device for performing power conversion and, more particularly, to protection to serge in the power semiconductor device.
2. (Related Art)
FIG. 1 is a diagram of a power semiconductor device according to the present invention (First Embodiment).
FIG. 2 is a diagram of a power semiconductor device according to the present invention (Second Embodiment).
FIG. 3 is a diagram of a conventional power semiconductor device.
Embodiments of a power semiconductor device according to the present invention will be described below with reference to the accompanying drawings.
First Embodiment.
FIG. 1 shows a configuration of a power semiconductor device according to the present invention. The power semiconductor device includes serially connected power semiconductor elements SW1 and SW2 which are respectively disposed on a low voltage side and a high voltage side, control circuits IC1 and IC2 for driving and controlling the respective power semiconductor elements SW1 and SW2, and free-wheeling diodes FW1 and FW2 of the respective power semiconductor elements SW1 and SW2. The power semiconductor device has a power supply receiving terminal VCC connected to a high potential side of a control power supply for driving the control circuits IC1 and IC2, a reference potential terminal N connected to a reference potential of the control power supply, and an output power supply terminal P connected to the high potential side of a power supply (to be referred to as a “driving power supply” hereinafter) for driving a switching element connected to the output of the power semiconductor device. A shunt resistor R1 is connected between an emitter terminal N1 of the power semiconductor element SW1 on the low voltage side and the terminal N connected to the low potential side of the control power supply. A parasitic inductance L exists on a conductor or wire between the emitter terminal which is a low potential terminal of the power semiconductor element SW1 and the shunt resistor R1. A filter circuit including a resistor R2 and a capacitor C1 is connected to the shunt resistor R1.