Thin film head with transverse biasing layers

A method for manufacturing thin film head comprising:

• a first step of stacking an antiferromagnetic layer, a pinning layer, a nonmagnetic conductive layer and a free magnetic layer in the order on the upper surface of a lower gap layer formed on a lower magnetic shield layer for providing a magnetoresistive element;
• a second step of stacking a nonmagnetic layer, a ferromagnetic layer and an antiferromagnetic layer on said free magnetic layer locating at the uppermost stratum of said magnetoresistive element for forming a pair of the right and the left laminated transverse biasing layers, each consisting of said nonmagnetic layer, said ferromagnetic layer and said antiferromagnetic layer;
• and
• a third step for forming a pair of the right and the left lead layers on said antiferromagnetic layers locating at the uppermost strata of said laminated transverse biasing layers.

A method for manufacturing thin film head comprising:

• a first step of stacking an antiferromagnetic layer, a pinning layer, a nonmagnetic conductive layer and a free magnetic layer in the order on the upper surface of a lower gap layer formed on a lower magnetic shield layer for providing a magnetoresistive element;
• a second step of stacking respective first nonmagnetic layers, first ferromagnetic layers, second nonmagnetic layers, second ferromagnetic layers and antiferromagnetic layers in the order on said free magnetic layer formed at the uppermost stratum of said magnetoresistive element for forming a pair of the right and the left laminated transverse biasing layers;
• and
• a third step for forming a pair of the right and the left lead layers on said antiferromagnetic layers locating at the uppermost strata of said laminated transverse biasing layers.

A method for manufacturing thin film head comprising:

• a first step of stacking an antiferromagnetic layer, a pinning layer, a nonmagnetic conductive layer and a free magnetic layer in the order on the upper surface of a lower gap layer formed on lower magnetic shield layer for providing a magnetoresistive element, and forming on top of it a cap layer;
• a second step of forming a resist mask on said cap layer, removing part of said cap layer locating on said magnetoresistive element to have said free magnetic layer exposed, and then stacking on the exposed surface of said free magnetic layer a pair of the right and the left nonmagnetic layers, ferromagnetic layers and antiferromagnetic layers in the order for providing a pair of the right and the left laminated transverse biasing layers, each including said nonmagnetic layer, said ferromagnetic layer and said antiferromagnetic layer;
• and
• a third step for forming a pair of the right and the left lead layers on said antiferromagnetic layers formed at the uppermost strata of said laminated transverse biasing layers.